Novel Two-Terminal Synapse/Neuron Based on an Antiferroelectric Hafnium Zirconium Oxide Device for Neuromorphic Computing

Functionally diverse devices with artificial neuron and synapse properties are critical for neuromorphic systems. We present a two-terminal artificial leaky-integrate-fire (LIF) neuron based on 6 nm Hf<sub>0.1</sub>Zr<sub>0.9</sub>O<sub>2</sub> (HZO) antiferroelectric (AFE) thin films and develop a synaptic device through work function (WF) engineering. LIF neuron characteristics, including integration, firing, and leakage, are achieved in W/HZO/W devices due to the accumulated polarization and spontaneous depolarization of AFE HZO films. By engineering the top electrode with asymmetric WFs, we found that Au/Ti/HZO/W devices exhibit synaptic weight plasticity, such as paired-pulse facilitation and long-term potentiation/depression, achieving >90% accuracy in digit recognition within constructed artificial neural network systems. These findings suggest that AFE HZO capacitor-based neurons and WF-engineered artificial synapses hold promise for constructing efficient spiking neuron networks and artificial neural networks, thereby advancing neuromorphic computing applications based on emerging AFE HZO devices.

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Institutions

Publication Details

Journal
Nano Letters
Published
2024-08-15
DOI
https://doi.org/10.1021/acs.nanolett.4c02142
Citations
18
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
3.76

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article

Novel Two-Terminal Synapse/Neuron Based on an Antiferroelectric Hafnium Zirconium Oxide Device for Neuromorphic Computing

Jiajie Yu, Yinchi Liu, Hao Zhu, Zhenhai Li et al.
18 citations
Nano Letters
Advanced Memory and Neural Computing
3.76
article

Novel Two-Terminal Synapse/Neuron Based on an Antiferroelectric Hafnium Zirconium Oxide Device for Neuromorphic Computing

Jiajie Yu, Yinchi Liu, Hao Zhu, Zhenhai Li, Yongkai Liu, Lu Chen, David Wei Zhang, Tianyu Wang, Qingqing Sun, Lin Chen, Jialin Meng, Kangli Xu, Yifan Song
article en
18 citations

Abstract

Functionally diverse devices with artificial neuron and synapse properties are critical for neuromorphic systems. We present a two-terminal artificial leaky-integrate-fire (LIF) neuron based on 6 nm Hf<sub>0.1</sub>Zr<sub>0.9</sub>O<sub>2</sub> (HZO) antiferroelectric (AFE) thin films and develop a synaptic device through work function (WF) engineering. LIF neuron characteristics, including integration, firing, and leakage, are achieved in W/HZO/W devices due to the accumulated polarization and spontaneous depolarization of AFE HZO films. By engineering the top electrode with asymmetric WFs, we found that Au/Ti/HZO/W devices exhibit synaptic weight plasticity, such as paired-pulse facilitation and long-term potentiation/depression, achieving >90% accuracy in digit recognition within constructed artificial neural network systems. These findings suggest that AFE HZO capacitor-based neurons and WF-engineered artificial synapses hold promise for constructing efficient spiking neuron networks and artificial neural networks, thereby advancing neuromorphic computing applications based on emerging AFE HZO devices.

Nano LettersVol. 24(36)
Shandong University (CN), Chinese Academy of Sciences (CN), Fudan University (CN), Shanghai Innovative Research Center of Traditional Chinese Medicine (CN), Jiaxing University (CN), Suzhou Research Institute (CN), Shanghai Fudan Microelectronics (China) (CN), Shanghai Institute of Microsystem and Information Technology (CN)
National Natural Science Foundation of China, China Postdoctoral Science Foundation, Science and Technology Commission of Shanghai Municipality, Natural Science Foundation of Jiangsu Province, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 6%
Advanced Memory and Neural Computing
3.76
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