Wattmeter based on tunnel-effect magnetoresistance sensor

This work shows how the tunnel-effect based magnetoresistance (TMR) technology can be used as a competitive sensing method in electrical current and power processors. The sensor is arranged in a Wheatstone bridge topology, and each magnetoresistance was composed of a series connection of 360 magnetic tunnel junction elements with the following structure (thickness in nm): 100 SiO2/5 Ta/15 Ru/5 Ta/15 Ru/5 Ta/5 Ru/20 IrMn/2 CoFe30/0.85 Ru/2.6 CoFe40B20/1.2 MgO/2 CoFe40B20/0.21 Ta/4 NiFe/0.20 Ru/6 IrMn/2 Ru/5 Ta/10 Ru. First, the electrical and thermal characteristics of the sensor were evaluated by analyzing its response to DC current sweeps at various temperatures, controlled using a climatic chamber. Nominal values of current sensitivity S (0.324 mV/A), bridge output offset voltage Vo,s,o (-37.1 mV), bridge input resistance Rinp,bridge (0.958 kΩ), and their thermal behavior were obtained (0.0036 mV/A°C, 0.079 mV/°C, and -0.31 Ω/°C). Second, an instrumentation system is introduced to characterize the sensor, measuring its sensitivity to AC line currents from the mains up to 10 Arms. Finally, an electronic wattmeter was developed showing the relevant quantities of its design. The circuit is able to interface a TMR Wheatstone bridge to an analog processor. Power and current measurements were obtained from a 150 Vrms AC mains 1.5 kW load with resistive and capacitive components, achieving less than 1% deviation over the expected values. The circuit shown can be used to interface these signals to more complex smart digital engines with active or reactive energy processing capabilities, while providing inherent high voltage isolation, thanks to its TMR measurement technology.