Analysis of scattering field characteristics for particles on coated wafer

Since the rapid development of semiconductor industry, the key nodes keep shrinking and defect detection played a vital role in produce yield improvement. The dark filed detection method has been widely used for un-patterned wafer. In this paper, a model is built for calculating and analyzing the scattering field of particles as defect, based on which the measured configuration is optimized, including the incident angle, polarization and scattering collection channels. Simulation shows the measurement accuracy and precision are improved after the measured configuration optimization, and may provide a reference for further defect detection.