Temperature-Dependent Spin Reorientation and Versatile Spin Valve Effect in Fe<sub>4</sub>GeTe<sub>2</sub>

Two-dimensional van der Waals ferromagnetic materials not only exhibit a plethora of magnetic phenomena under reduced dimensions but also enrich the realm of nanoscale spintronics devices. Here, we identify a spin reorientation (SR) transition from easy plane to uniaxial in Fe4GeTe2 as the temperature decreases. Such a transition occurs at TSR = 107 K for bulk samples determined through angle-resolved magnetization measurements and at 125 K for a 15-nm-thick nanoflake as evidenced by distinct responses of the residual resistance and coercive field in anomalous Hall measurements. Moreover, the spin valve, employing two exfoliated Fe4GeTe2 crystals as ferromagnetic electrodes without a spacer layer, exhibits a temperature-dependent magnetoresistance (MR) sign, displaying normal negative MR with in-plane magnetic anisotropy at elevated temperatures and inverse spin-valve-type MR with perpendicular magnetic anisotropy at lower temperatures. Our findings open up exciting possibilities for the development of functional nanoscale spintronics devices.

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Publication Details

Journal
ACS Applied Electronic Materials
Published
2024-08-16
DOI
https://doi.org/10.1021/acsaelm.4c00939
Citations
2
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.23

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article

Temperature-Dependent Spin Reorientation and Versatile Spin Valve Effect in Fe4GeTe2

Qiming Peng, Huanlin Liu, Zixun Zhang, Yangbo Zhou et al.
2 citations
ACS Applied Electronic Materials
2D Materials and Applications
0.23
article

Temperature-Dependent Spin Reorientation and Versatile Spin Valve Effect in Fe4GeTe2

Qiming Peng, Huanlin Liu, Zixun Zhang, Yangbo Zhou, Luoyang Ding, Siyuan Wan, Zhi-xiong Li, Yuhang Wu, C. Yu, Hanying Huang
article en
2 citations

Abstract

Two-dimensional van der Waals ferromagnetic materials not only exhibit a plethora of magnetic phenomena under reduced dimensions but also enrich the realm of nanoscale spintronics devices. Here, we identify a spin reorientation (SR) transition from easy plane to uniaxial in Fe4GeTe2 as the temperature decreases. Such a transition occurs at TSR = 107 K for bulk samples determined through angle-resolved magnetization measurements and at 125 K for a 15-nm-thick nanoflake as evidenced by distinct responses of the residual resistance and coercive field in anomalous Hall measurements. Moreover, the spin valve, employing two exfoliated Fe4GeTe2 crystals as ferromagnetic electrodes without a spacer layer, exhibits a temperature-dependent magnetoresistance (MR) sign, displaying normal negative MR with in-plane magnetic anisotropy at elevated temperatures and inverse spin-valve-type MR with perpendicular magnetic anisotropy at lower temperatures. Our findings open up exciting possibilities for the development of functional nanoscale spintronics devices.

ACS Applied Electronic Materials
University of Science and Technology of China (CN), Nanchang University (CN), Hefei National Center for Physical Sciences at Nanoscale (CN)
National Natural Science Foundation of China, Natural Science Foundation of Jiangxi Province
Affordable and clean energy
Openalex Percentile: Top 52%
2D Materials and Applications
0.23
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