Single electron states and intraband absorption in GaAs biconical quantum dot

This research is devoted to the electronic characteristics of the biconical quantum dot constructed from GaAs, employing the Finite Element Method. The study initiated with the calculation of wave functions and energies for the ground state and the first four excited states. This enabled the discernment of the influence of the quantum dot's geometry on its electronic configuration. Utilizing the derived wave functions and energies for a single electron, the oscillator strengths for various quantum transitions were determined. The absorption spectrum was observed during transitions from the ground to the next four excited states.