Silicon-based perovskite plasmonic diode with highly polarized emission

Abstract Here, we propose and develop a silicon (Si)-based perovskite plasmon-emitting diode (PED) with controlled linear polarization in this study. Such polarization originates from the efficient excitation of surface plasmons by excitons in the active layer of the device and the efficient outcoupling by a wedged boundary of a metal electrode. Furthermore, a p-type Si substrate serves as an anode of the diode, and a hole blocking layer of SiO 2 is introduced in the PEDOT:PSS/Si heterojunction for carrier injection balance. Pure green emission light has been achieved from devices with varied thicknesses of the emitting layer, and the maximum degree of polarization is measured to be 0.79. The field distribution and polarization of the PED were simulated and measured. Such a low-cost Si-based plasmonic diode provides a promising way to realize simpler and more compact multiple-functional light sources, which are extensively demanded for optoelectronic integration.