Low-symmetry vacancy-related spin qubit in hexagonal boron nitride

Abstract Point defect qubits in semiconductors have demonstrated their outstanding capabilities for high spatial resolution sensing generating broad multidisciplinary interest. Hexagonal boron nitride (hBN) hosting point defect qubits have recently opened up new horizons for quantum sensing by implementing sensing foils. The sensitivity of point defect sensors in hBN is currently limited by the linewidth of the magnetic resonance signal, which is broadened due to strong hyperfine couplings. Here, we report on a vacancy-related spin qubit with an inherently low symmetry configuration, the VB2 center, giving rise to a reduced magnetic resonance linewidth at zero magnetic fields. The VB2 center is also equipped with a classical memory that can be utilized for storing population information. Using scanning transmission electron microscopy imaging, we confirm the existence of the VB2 configuration in free-standing monolayer hBN.

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Publication Details

Journal
npj Computational Materials
Published
2024-08-15
DOI
https://doi.org/10.1038/s41524-024-01361-z
Citations
6
Primary Topic
Graphene research and applications
Type
article
Field-Weighted Citation Impact
0.70

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article

Low-symmetry vacancy-related spin qubit in hexagonal boron nitride

Viktor Ivády, Gergő Thiering, Rohit Babar, Oscar Bulancea-Lindvall et al.
6 citations
npj Computational Materials
Graphene research and applications
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article

Low-symmetry vacancy-related spin qubit in hexagonal boron nitride

Viktor Ivády, Gergő Thiering, Rohit Babar, Oscar Bulancea-Lindvall, Jamie H. Warner, Anton Pershin, Hyoju Park, Örs Legeza, Ádám Gali, Gergely Barcza, Igor A. Abrikosov
article en
6 citations

Abstract

Abstract Point defect qubits in semiconductors have demonstrated their outstanding capabilities for high spatial resolution sensing generating broad multidisciplinary interest. Hexagonal boron nitride (hBN) hosting point defect qubits have recently opened up new horizons for quantum sensing by implementing sensing foils. The sensitivity of point defect sensors in hBN is currently limited by the linewidth of the magnetic resonance signal, which is broadened due to strong hyperfine couplings. Here, we report on a vacancy-related spin qubit with an inherently low symmetry configuration, the VB2 center, giving rise to a reduced magnetic resonance linewidth at zero magnetic fields. The VB2 center is also equipped with a classical memory that can be utilized for storing population information. Using scanning transmission electron microscopy imaging, we confirm the existence of the VB2 configuration in free-standing monolayer hBN.

npj Computational MaterialsVol. 10(1)
Linköping University (SE), Eötvös Loránd University (HU), Budapest University of Technology and Economics (HU), HUN-REN Wigner Research Centre for Physics (HU), Montavid Thermodynamic Research Group (HU), Institute for Advanced Study (DE), Walker (United States) (US), Technical University of Munich (DE), The University of Texas at Austin (US)
U.S. Department of Energy, European Commission, National Science Council, Magyar Tudományos Akadémia, Linköpings Universitet, Knut och Alice Wallenbergs Stiftelse, Vetenskapsrådet, Technische Universität München, Eötvös Loránd Tudományegyetem, Nemzeti Kutatási Fejlesztési és Innovációs Hivatal, Office of Science, Nemzeti Kutatási, Fejlesztési és Innovaciós Alap, National Supercomputer Centre, Linköpings Universitet, National Research, Development and Innovation Office, Basic Energy Sciences, Pacific Northwest National Laboratory
Openalex Percentile: Top 30%
Graphene research and applications
0.70
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