Defect characterizations of N-rich GaNAs ternary alloys

This paper presents a comprehensive analysis of defects in As-diluted GaN alloys. GaNAs crystal layers with an arsenic content of 1.8, 2.9, 4.1, and 5.5 % are grown on GaN buffer layers using the metalorganic vapour-phase epitaxy (MOVPE) method. Since these alloys have potential in electronics due to the modification of the electronic structure caused by As, it is extremely important to determine their quality. Complementary techniques for the characterization of the alloys are used. Densities of screw and edge dislocations are obtained using X-ray diffraction measurements performed, respectively, from the surface and edge of samples. In turn, a population of vacancies is determined by Doppler broadening variable energy positron annihilation spectroscopy (DB-VEPAS) and variable energy positron lifetime positron annihilation spectroscopy (VEPALS), which provide the distribution of vacancies as a function of depth. An increase in dislocation density is observed accompanied by a rise in the concentration of vacancy agglomerations and reduction in Ga-vacancy-hydrogen associates in the function of As-content. • Metalorganic vapour-phase epitaxy is used to create As-diluted GaN(As) alloys. • Lowering the growth temperature to incorporate arsenic alters defect distributions. • Arsenic incorporation appears to promote the formation of Ga-vacancies. • VEPALS indicates an increase in vacancy agglomeration size with rising As content. • Ga-vacancy-hydrogen complexes emerging as prominent defect types in GaNAs alloys.