Valley switch effect in an α-T<sub>3</sub> lattice-based superconducting interferometer

Abstract Dirac electrons possess a valley degree of freedom, which is currently under investigation as a potential information carrier. We propose an approach to generate and manipulate the valley-switching current (VSC) through Andreev reflection using an interferometer-based superconductor hybrid junction. The interferometer comprises a ring-shaped structure formed by topological kink states in the α -T 3 lattice via carefully designed electrostatic potentials. Our results demonstrate the feasibility of achieving a fully polarized VSC in this device without contamination from cotunneling electrons sharing the same valley as the incident electron. Furthermore, we show that control over the fully polarized VSC can be achieved by applying a nonlocal gate voltage or modifying the global parameter α . The former alters the dynamic phase of electrons while the latter provides an α -dependent Berry phase, both directly influencing quantum interference and thereby affecting performance in terms of generating and manipulating VSC, crucial for advancements in valleytronics.

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Publication Details

Journal
Chinese Physics B
Published
2024-08-15
DOI
https://doi.org/10.1088/1674-1056/ad6f91
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
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article

Valley switch effect in an α-T3 lattice-based superconducting interferometer

Jun 军 Wang 汪, Ya-Jun 亚军 Wei 魏
Chinese Physics B
Topological Materials and Phenomena
article

Valley switch effect in an α-T3 lattice-based superconducting interferometer

Jun 军 Wang 汪, Ya-Jun 亚军 Wei 魏
article en

Abstract

Abstract Dirac electrons possess a valley degree of freedom, which is currently under investigation as a potential information carrier. We propose an approach to generate and manipulate the valley-switching current (VSC) through Andreev reflection using an interferometer-based superconductor hybrid junction. The interferometer comprises a ring-shaped structure formed by topological kink states in the α -T 3 lattice via carefully designed electrostatic potentials. Our results demonstrate the feasibility of achieving a fully polarized VSC in this device without contamination from cotunneling electrons sharing the same valley as the incident electron. Furthermore, we show that control over the fully polarized VSC can be achieved by applying a nonlocal gate voltage or modifying the global parameter α . The former alters the dynamic phase of electrons while the latter provides an α -dependent Berry phase, both directly influencing quantum interference and thereby affecting performance in terms of generating and manipulating VSC, crucial for advancements in valleytronics.

Chinese Physics BVol. 33(11)
Southeast University (CN)
Peace, Justice and strong institutions
Openalex Percentile: Top 89%
Topological Materials and Phenomena
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