Pressure-induced structural, electronic, and superconducting phase transitions in TaSe<sub>3</sub>

Abstract TaSe 3 has garnered significant research interests due to its unique quasi-one-dimensional crystal structure, which gives rise to distinctive properties. Using crystal structure search and first-principles calculations, we systematically investigated the pressure-induced structural and electronic phase transitions of quasi-one-dimensional TaSe 3 up to 100 GPa. In addition to the ambient pressure phase ( P 2 1 / m -I), we identified three high-pressure phases: P 2 1 / m -II, Pnma , and Pmma . For the P 2 1 / m -I phase, the inclusion of spin–orbit coupling (SOC) results in significant SOC splitting and changes in the band inversion characteristics. Furthermore, band structure calculations for the three high-pressure phases indicate metallic natures, and the electron localization function suggests ionic bonding between Ta and Se atoms. Our electron–phonon coupling calculations reveal a superconducting critical temperature of approximately 6.4 K for the Pmma phase at 100 GPa. This study provides valuable insights into the high-pressure electronic behavior of quasi-one-dimensional TaSe 3 .

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Publication Details

Journal
Chinese Physics B
Published
2024-08-15
DOI
https://doi.org/10.1088/1674-1056/ad6f92
Citations
3
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.35
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Pressure-induced structural, electronic, and superconducting phase transitions in TaSe3

Qing Lu, Pei Zhou, Chi Ding, Xiaomeng Wang et al.
3 citations
Chinese Physics B
2D Materials and Applications
0.35
article

Pressure-induced structural, electronic, and superconducting phase transitions in TaSe3

Qing Lu, Pei Zhou, Chi Ding, Xiaomeng Wang, Jian Sun, Yuhang Li
article en
3 citations

Abstract

Abstract TaSe 3 has garnered significant research interests due to its unique quasi-one-dimensional crystal structure, which gives rise to distinctive properties. Using crystal structure search and first-principles calculations, we systematically investigated the pressure-induced structural and electronic phase transitions of quasi-one-dimensional TaSe 3 up to 100 GPa. In addition to the ambient pressure phase ( P 2 1 / m -I), we identified three high-pressure phases: P 2 1 / m -II, Pnma , and Pmma . For the P 2 1 / m -I phase, the inclusion of spin–orbit coupling (SOC) results in significant SOC splitting and changes in the band inversion characteristics. Furthermore, band structure calculations for the three high-pressure phases indicate metallic natures, and the electron localization function suggests ionic bonding between Ta and Se atoms. Our electron–phonon coupling calculations reveal a superconducting critical temperature of approximately 6.4 K for the Pmma phase at 100 GPa. This study provides valuable insights into the high-pressure electronic behavior of quasi-one-dimensional TaSe 3 .

Chinese Physics BVol. 33(10)
Ningxia University (CN), Collaborative Innovation Center of Advanced Microstructures (CN), Nanjing University (CN)
Openalex Percentile: Top 45%
2D Materials and Applications
0.35
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Pressure-induced structural, electronic, and superconducting phase transitions in TaSe<sub>3</sub> — Qing Lu, Pei Zhou, et al. · Chinese Physics B (2024) | TGRS Research Map | TGRS