Interplay of structure and superconductivity in α-SnS tuned by pressure

The emergent structure under high pressure introduces a distinctive lattice arrangement, deviating from conventional configurations and offering a unique landscape for exploring intriguing properties, especially in the domain of superconductivity. Here, we have systematically investigated the structural evolution and electrical properties of \ensuremath{\alpha}-SnS under high pressure. The x-ray diffraction results indicate that SnS undergoes two phase transitions at 16.8 and 49.7 GPa, representing a second-order Pnma to Cmcm transition and a first-order Cmcm to $Pm\overline{3}m$ transition. In addition, single-crystal in situ high-pressure Raman spectroscopy experiments have confirmed it. Electrical transport measurements demonstrate the transition of SnS from a semiconductor to a metal and then to a superconductor under high pressure, intricately linked to a structural transition and an increase in the hole carrier concentration. Combined with our first principles calculation, it is determined that the topological properties and superconductivity coexist in SnS with the $Pm\overline{3}m$ phase. The nonmonotonic variation of ${T}_{c}$ in SnS with pressure is attributed to the electron-phonon coupling effect. Additionally, this study marks a confirmation of the structural phase transitions in SnS under high pressure. Our study contributes to a deeper understanding of the intricate relationship between structure and performance in extreme conditions.

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Publication Details

Journal
Physical review. B./Physical review. B
Published
2024-08-15
DOI
https://doi.org/10.1103/physrevb.110.054107
Citations
6
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
1.25

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article

Interplay of structure and superconductivity in α-SnS tuned by pressure

Yanping Huang, Xindeng Lv, Tian Cui, Simin Li
6 citations
Physical review. B./Physical review. B
Chalcogenide Semiconductor Thin Films
1.25
article

Interplay of structure and superconductivity in α-SnS tuned by pressure

Yanping Huang, Xindeng Lv, Tian Cui, Simin Li
article en
6 citations

Abstract

The emergent structure under high pressure introduces a distinctive lattice arrangement, deviating from conventional configurations and offering a unique landscape for exploring intriguing properties, especially in the domain of superconductivity. Here, we have systematically investigated the structural evolution and electrical properties of \ensuremath{\alpha}-SnS under high pressure. The x-ray diffraction results indicate that SnS undergoes two phase transitions at 16.8 and 49.7 GPa, representing a second-order Pnma to Cmcm transition and a first-order Cmcm to $Pm\overline{3}m$ transition. In addition, single-crystal in situ high-pressure Raman spectroscopy experiments have confirmed it. Electrical transport measurements demonstrate the transition of SnS from a semiconductor to a metal and then to a superconductor under high pressure, intricately linked to a structural transition and an increase in the hole carrier concentration. Combined with our first principles calculation, it is determined that the topological properties and superconductivity coexist in SnS with the $Pm\overline{3}m$ phase. The nonmonotonic variation of ${T}_{c}$ in SnS with pressure is attributed to the electron-phonon coupling effect. Additionally, this study marks a confirmation of the structural phase transitions in SnS under high pressure. Our study contributes to a deeper understanding of the intricate relationship between structure and performance in extreme conditions.

Physical review. B./Physical review. BVol. 110(5)
Ningbo University (CN), Jilin University (CN), Jilin Medical University (CN), State Key Laboratory of High Pressure and Superhard Materials (CN)
National Natural Science Foundation of China, Natural Science Foundation of Ningbo Municipality, National Key Research and Development Program of China
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Openalex Percentile: Top 20%
Chalcogenide Semiconductor Thin Films
1.25
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