Enhanced optical gain of c-plane InGaN laser diodes via a strain relaxed template with reduced threading dislocation density
In this work, we demonstrate a method to reduce the threading dislocation density (TDD) of the previously reported strain relaxed template (SRT) on c-plane. Through the processes of nano-patterning/etching and epitaxial lateral overgrowth (ELO) of GaN, the TDD was reduced from beyond measurable level to 1.8 × 10<sup>9</sup>/cm<sup>2</sup>. The electrically pumped blue edge emitting laser diodes (EELDs) exhibit much improved device performance than previously reported results, where a threshold current density (J<sub>th</sub>) of 7.4 kA/cm<sup>2</sup> is demonstrated, with the internal loss as low as 8-10 cm<sup>-1</sup>. Additionally, the thresholds outperform conventional c-plane EELDs without SRT as the cavity length scales below 1200 µm. Moreover, a more than 50% enhanced material gain than conventional c-plane devices is experimentally demonstrated.
Authors
- Hsun–Ming Chang (ORCID: https://orcid.org/0000-0001-9341-7208)
- Norleakvisoth Lim (ORCID: https://orcid.org/0000-0002-4161-934X)
- Michael J. Gordon (ORCID: https://orcid.org/0000-0003-0123-9649)
- Shuji Nakamura (ORCID: https://orcid.org/0000-0001-6334-2428)
- Steven P. DenBaars (ORCID: https://orcid.org/0000-0002-6612-5258)
- Vincent Rienzi (ORCID: https://orcid.org/0000-0001-5768-822X)
Institutions
- University of California System (US)
Publication Details
- Journal
- Optics Express
- Published
- 2024-08-15
- DOI
- https://doi.org/10.1364/oe.534149
- Citations
- 2
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.62
Funders
- Defense Advanced Research Projects Agency
- Solid State Lighting and Energy Electronics Center, University of California Santa Barbara