Enhanced Intrinsic Electrical Properties in Twisted Tellurium Nanowires

The discovery of magic-angle graphene has brought the study of twistronics to the forefront. Currently, twistronics generally study strongly correlated states in condensed matter physics such as superconductivity, Mott insulator, Chen insulator, nematic order, etc., and fewer electrical conductivity investigations have been conducted in the direction perpendicular to the twist angle. This paper examines the conductivity properties of tellurium (Te) twisted nanowires that were manufactured under highly alkaline circumstances. The twisted nanowires exhibit a resistance approximately one-third that of the untwisted nanowires. The conductivity parameters were evaluated after eliminating the twist angle by a semiconductor annealing technique. These concepts clearly demonstrate how the twist angle and annealing factor impact the conductivity of semiconductor nanowires. Our result offers useful information for future investigations in the field of twistronics and presents possible opportunities for examining the electrical characteristics in the vertical orientation of the twist angle.