High‐precision peaks‐grabbing modified <i>π</i>‐type model in multi‐laps on‐chip spiral inductors using <i>R</i>–<i>L</i> ladder network

Abstract Parasitic effects significantly interfere with systematic model‐parameter extraction, making linear fitting of spiral inductors challenging when the number of turns exceeds 6, as seen in existing works. Based on the single‐ π model, we propose a parameter‐extraction technique using an additional three ladder R–L ladder network in series to more accurately predict skin and proximity effects. Compared to the latest enhanced π ‐circuit model, our proposed model with parameter‐extraction technique in multi‐laps inductors accurately predicts the characteristics of series inductance ( L eff ) and quality factor ( Q ) across the self‐resonant frequency, especially at the peak. This model could be used directly for the model of the on‐chip inductor in both academic and industrial fields.