<i>n</i>-type kesterite thermoelectric (Cu1−xAgx)2ZnSnS4 single crystals exceeding dimensionless figure of merit value of 1.0

The lack of attractive n-type thermoelectric materials greatly restricts their applications because most high-performance materials are p-type conductors, such as the kesterite compound Cu2ZnSnS4. This study reports high-quality n-type kesterite (Cu1−xAgx)2ZnSnS4 (CAZTS) single crystals that exhibit a record high dimensionless figure of merit value of 1.1 at approximately 800 K, primarily owing to Ag alloying, cation compositional optimization, and intrinsic low thermal conductivity. An n-type CAZTS-based single-leg device was fabricated using a Mo-barrier layer. The device exhibited a thermoelectric conversion efficiency of 3.4% at a temperature gradient of 473 K. This study provides insights into developing thermoelectric modules using environmentally friendly kesterite materials.

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Publication Details

Journal
Applied Physics Letters
Published
2024-08-12
DOI
https://doi.org/10.1063/5.0220909
Citations
5
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
0.59

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article

n-type kesterite thermoelectric (Cu1−xAgx)2ZnSnS4 single crystals exceeding dimensionless figure of merit value of 1.0

Yuichi Hirai, Tomohiro Higashi, Akira Nagaoka, Kensuke Nishioka et al.
5 citations
Applied Physics Letters
Advanced Thermoelectric Materials and Devices
0.59
article

n-type kesterite thermoelectric (Cu1−xAgx)2ZnSnS4 single crystals exceeding dimensionless figure of merit value of 1.0

Yuichi Hirai, Tomohiro Higashi, Akira Nagaoka, Kensuke Nishioka, Shoma Miura, Kenji Yoshino, Koki Nakashima
article en
5 citations

Abstract

The lack of attractive n-type thermoelectric materials greatly restricts their applications because most high-performance materials are p-type conductors, such as the kesterite compound Cu2ZnSnS4. This study reports high-quality n-type kesterite (Cu1−xAgx)2ZnSnS4 (CAZTS) single crystals that exhibit a record high dimensionless figure of merit value of 1.1 at approximately 800 K, primarily owing to Ag alloying, cation compositional optimization, and intrinsic low thermal conductivity. An n-type CAZTS-based single-leg device was fabricated using a Mo-barrier layer. The device exhibited a thermoelectric conversion efficiency of 3.4% at a temperature gradient of 473 K. This study provides insights into developing thermoelectric modules using environmentally friendly kesterite materials.

Applied Physics LettersVol. 125(7)
University of Miyazaki (JP)
TEPCO Memorial Foundation, Japan Society for the Promotion of Science
Responsible consumption and production
Openalex Percentile: Top 34%
Advanced Thermoelectric Materials and Devices
0.59
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