Temperature‐Induced Transformation of the Atomic Configuration of the BO₂* Defect in Boron‐Doped Czochralski Si

In this study, the new data concerning the electronic and vibrational properties of the B s O 2i * defect in Czochralski‐grown boron‐doped silicon are reported. In silicon subjected to treatment at elevated temperatures, a new boron‐related defect is detected. An additional intracenter electronic transition for boron associated with the revealed defect is observed. The defect is identified as B s O 2i due to the linear dependence of its formation efficiency on the boron content and the quadratic dependence on the oxygen concentration. The revealed complex is formed synchronously with the annealing of the previously identified B s O 2i * defect. The detected complex is formed as a result of temperature transformation of the atomic configuration of the B s O 2i * defect. The transformation occurs with activation energy of 2.59 eV. The local vibrational modes associated with both configurations of the B s O 2i * complex are identified. The results of the study suggest that the B s O 2i * defect in both configurations exists in a wide temperature interval, impacts the optical and electronic properties of the material, and must be taken into consideration when developing Si:B‐based devices.