A high-responsivity 30 μm × 30 μm Perovskite-IGZO Phototransistor for Weak Light Detection

Abstract Introducing various absorption materials to the IGZO thin film transistor (TFT) forms new device approach for making high performance photodetectors and image sensors. In this study, a 30 μm × 30 μm IGZO phototransistor with quasi-2D perovskite absorption layer is demonstrated, which attains a high responsivity reaching 1.5 × 10 5 A W −1 and a well detectivity of 3.07 × 10 14 Jones under 87.4 nW cm −2 illumination at 520nm. This approach combines the merits of low turn-off dark current of the IGZO TFT and the high optoelectronic properties of the perovskite photo absorption layer, which is very promising for forming high resolution low cost flat-panel image sensors.