Threshold Voltage Modulation Strategies for ZnO TFT and Enhanced Performance of Depletion-Mode Inverters

Abstract This work presents the analysis and comparison of the adjustment mechanism and electrical characteristics of the depletion-mode transistors fabricated by the three threshold modulation methods. the electrical performance test of the depletion-mode inverter composed of each depletion-mode TFTs is completed, among which, the depletion transistor fabricated by electron beam evaporation of 100 nm AL as the gate material has excellent performance, with a switching ratio of 108, a subthreshold swing of 281 mV/dec, and a turn-on voltage adjusted from 0 V to -6.8 V, which has the advantages of strong device stability and good negative modulation. the output current of the depletion inverter composed of the AL gate is up to the μA level. excellent driving capability is shown, A foundation is established for the subsequent construction of complex circuits based on zinc oxide thin-film transistors.