Improving the performance of n-i-p perovskite photodetectors via bathocuproine electron transport interlayer

Abstract In this study, a planar photodetector with a n-i-p structure comprised of Glass/ITO/SnO 2 /bathocuproine (BCP)/Cs 0.05 (FA 0.85 MA 0.15 ) 0.95 Pb(I 0.85 Br 0.15 ) 3 /P3HT/Ag is investigated. Here, the BCP layer was inserted as a passivation layer between the SnO 2 electron transport layer (ETL) and the perovskite to reduce the leakage current while improving its photodetectivity. As a result, the photodetector has a broad spectral response range (300-800 nm), and a low dark current of 8.20 × 10 −7 A/cm 2 . In addition, the responsivity of the device reached 0.432 A W −1 when operated at self-powered mode, the corresponding detectivity reaches 7.4 × 10 11 Jones, while the linear dynamic range reaches 51.3 dB and response time of 28 μs.