Long‐Range Non‐Coulombic Coupling at the LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Interface

Abstract The LaAlO 3 /SrTiO 3 interface hosts a plethora of gate‐tunable electronic phases. Gating of LaAlO 3 /SrTiO 3 interfaces is usually assumed to occur electrostatically. However, increasing evidence suggests that non‐local interactions can influence and, in some cases, dominate the coupling between applied gate voltages and electronic properties. Here, quasi‐1D ballistic electron waveguides are sketched at the LaAlO 3 /SrTiO 3 interface as a probe to understand how gate tunability varies as a function of spatial separation. Gate tunability measurements reveal the scaling law to be at odds with the pure electrostatic coupling observed in traditional semiconductor systems. The non‐Coulombic gating at the interface is attributed to a long‐range nanoelectromechanical coupling between the gate and electron waveguide, possibly mediated by the ferroelastic domains in SrTiO 3 . The long‐range interactions at the LaAlO 3 /SrTiO 3 interface add unexpected richness and complexity to this correlated electron system.

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Publication Details

Journal
Advanced Materials Interfaces
Published
2024-08-13
DOI
https://doi.org/10.1002/admi.202400223
Citations
1
Primary Topic
Electronic and Structural Properties of Oxides
Type
article
Field-Weighted Citation Impact
0.12

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article

Long‐Range Non‐Coulombic Coupling at the LaAlO3/SrTiO3 Interface

Kitae Eom, Jeremy Levy, Muqing Yu, Aditi Nethwewala et al.
1 citations
Advanced Materials Interfaces
Electronic and Structural Properties of Oxides
0.12
article

Long‐Range Non‐Coulombic Coupling at the LaAlO3/SrTiO3 Interface

Kitae Eom, Jeremy Levy, Muqing Yu, Aditi Nethwewala, Patrick Irvin, Chang‐Beom Eom, Ranjani Ramachandran
article en
1 citations

Abstract

Abstract The LaAlO 3 /SrTiO 3 interface hosts a plethora of gate‐tunable electronic phases. Gating of LaAlO 3 /SrTiO 3 interfaces is usually assumed to occur electrostatically. However, increasing evidence suggests that non‐local interactions can influence and, in some cases, dominate the coupling between applied gate voltages and electronic properties. Here, quasi‐1D ballistic electron waveguides are sketched at the LaAlO 3 /SrTiO 3 interface as a probe to understand how gate tunability varies as a function of spatial separation. Gate tunability measurements reveal the scaling law to be at odds with the pure electrostatic coupling observed in traditional semiconductor systems. The non‐Coulombic gating at the interface is attributed to a long‐range nanoelectromechanical coupling between the gate and electron waveguide, possibly mediated by the ferroelastic domains in SrTiO 3 . The long‐range interactions at the LaAlO 3 /SrTiO 3 interface add unexpected richness and complexity to this correlated electron system.

Advanced Materials InterfacesVol. 11(27)
University of Wisconsin–Madison (US), University of Pittsburgh (US), Pittsburgh Quantum Institute (US)
National Science Foundation, U.S. Department of Energy, Gordon and Betty Moore Foundation, University of Wisconsin-Madison, Office of Science, Office of Naval Research, Basic Energy Sciences, Office of Naval Research Global
Openalex Percentile: Top 61%
Electronic and Structural Properties of Oxides
0.12
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