Tracking the creation of single photon emitters in AlN by implantation and annealing

In this study, we inspect and analyse the effect of Al implantation into AlN by conducting confocal microscopy on the ion implanted regions, before and after implantation, followed by an annealing step. The independent effect of annealing is studied in an unimplanted control region, which showed that annealing alone does not produce new emitters. Through tracking individual locations in a lithographically patterned sample, we observe that point-like emitters are created in the implanted regions after annealing. The newly created quantum emitters show anti-bunching under ambient conditions and are spectrally similar to the previously discovered emitters in as-grown AlN. • Aluminium implantation into MOCVD AlN generates single photon emitters after thermal annealing. • The creation of the new emitters is documented through tracking individual locations in a lithographically patterned sample. • Newly created emitters are spectrally comparable to the native emitters previously discovered in AlN. • The emitter creation seems to occur deeper than the created vacancy distribution, which was attributed to Al i diffusion.