Modeling and Simulation of a Cascaded Polarization-Coupled System of Broad-Area Semiconductor Lasers
We consider a brightness- and power-scalable rectified polarization beam combining scheme for high-power, broad-area edge-emitting semiconductor laser diodes. The coupling of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$2^{m}$</tex-math></inline-formula> emitters is achieved through Lyot-filtered optical reinjection from a specially designed multi-stage external cavity, which forces individual diodes to lase on interleaved frequency combs with overlapping envelopes. Simulations of up to sixteen coupled emitters and analysis of the calculated beams suggest that, under ideal conditions, a beam coupling efficiency of approximately 90% can be expected. Reducing optical losses within the external cavity is crucial for improving this efficiency in experimental systems.
Authors
- V. Raab
- Mindaugas Radziunas (ORCID: https://orcid.org/0000-0003-0306-1266)
Institutions
- Weierstrass Institute for Applied Analysis and Stochastics (DE)
Publication Details
- Journal
- IEEE Journal of Selected Topics in Quantum Electronics
- Published
- 2024-08-13
- DOI
- https://doi.org/10.1109/jstqe.2024.3442429
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00