Online Junction Temperature Monitoring Method for SiC MOSFETs Based on Turn-Off Miller Plateau Voltage
Online junction temperature monitoring of SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> based on turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> Miller plateau voltage ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MP,off</sub> ) has been explored in this article. As the junction temperature rises, <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MP,off</sub> experiences a decline while extending its duration, thereby enhancing the precision of sampling <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MP,off</sub> with a diminutive turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> resistance ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R<sub>g</sub></i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">,off</sub> ). A novel extraction approach for <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MP,off</sub> is introduced, involving the continuous sampling of gate voltage via a network of resistances and an analog-to-digital converter (ADC). <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MP,off</sub> is ascertained through the discrepancy between two consecutive output points of the ADC. Validation of this monitoring technique is conducted through double pulse tests and a buck converter under varying temperatures. Empirical findings demonstrate a commendable linear relationship between <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MP,off</sub> and junction temperature. In the quest for a balance among thermal sensitivity accuracy, turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> delay, and turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> loss, a recommended value for <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R<sub>g</sub></i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">,off</sub> of SCT3040KR stands at approximately 15 Ω. Employing a 15 Ω <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R<sub>g</sub></i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">,off</sub> , the temperature sensitivity of V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MP,off</sub> for SCT3040KR and SCT3105KR hovers around −11.3 mV/°C and −9.1 mV/°C, respectively. With calibrations of aging and threshold voltages in advance, the proposed methodology exhibits promising potential in the realm of SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> junction temperature monitoring.
Authors
- Junhong Feng (ORCID: https://orcid.org/0000-0001-8865-804X)
- Yufei Tian (ORCID: https://orcid.org/0009-0009-6145-697X)
- Xuetong Zhou (ORCID: https://orcid.org/0000-0001-9261-5974)
- Xinhong Cheng (ORCID: https://orcid.org/0000-0001-6235-1728)
- Li Zheng (ORCID: https://orcid.org/0000-0002-1293-2329)
- Yuhua Quan (ORCID: https://orcid.org/0000-0001-8216-5308)
- Tiantian Liu (ORCID: https://orcid.org/0009-0000-9958-7486)
- Ruiyan Pan
Institutions
- Chinese Academy of Sciences (CN)
- Shanghai Institute of Microsystem and Information Technology (CN)
- University of Chinese Academy of Sciences (CN)
- University of California, Berkeley (US)
Publication Details
- Journal
- IEEE Transactions on Power Electronics
- Published
- 2024-08-13
- DOI
- https://doi.org/10.1109/tpel.2024.3442546
- Citations
- 6
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 1.25
Funders
- National Natural Science Foundation of China
- Youth Innovation Promotion Association of the Chinese Academy of Sciences
- Shanghai Rising-Star Program