High-Power Electronic Applications Enabled by Medium Voltage Silicon-Carbide Technology: An Overview
With the electrification of society and the green transition, the need for efficient high-power electronic converters to support the electricity demand is at an all-time high. A key enabler is the emerging medium voltage (MV) silicon-carbide (SiC) semiconductor devices, which offer improved static and dynamic performance compared to their silicon-counterparts. This article presents a thorough overview of the recent advancements within the MV SiC technology, examining both available semiconductor devices and power modules from industry and academia and directly associates them to their applicability through a comprehensive review of typical high-power electronic applications. At last, the future perspectives on the applicability and commercial widespread of the MV SiC technology are presented.
Authors
- Hongbo Zhao (ORCID: https://orcid.org/0000-0002-0043-0030)
- Abdul Basit Mirza (ORCID: https://orcid.org/0000-0003-4781-9657)
- Asger Bjørn Jørgensen (ORCID: https://orcid.org/0000-0003-2171-4531)
- Benjamin Futtrup Kjærsgaard (ORCID: https://orcid.org/0000-0002-7869-313X)
- Yang Li (ORCID: https://orcid.org/0009-0000-6669-7195)
- Shiyue Deng
- Stig Munk‐Nielsen (ORCID: https://orcid.org/0000-0001-9653-5437)
- Morten Rahr Nielsen (ORCID: https://orcid.org/0000-0002-2160-0465)
- Fang Luo
Institutions
- Stony Brook University (US)
- Aalborg University (DK)
Publication Details
- Journal
- IEEE Transactions on Power Electronics
- Published
- 2024-08-13
- DOI
- https://doi.org/10.1109/tpel.2024.3442483
- Citations
- 48
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 10.02
Funders
- National Science Foundation
- Innovationsfonden