A 30-nm-tunable photoluminescence caused by remote Γ-X-mixings in a GaAs/AlAs asymmetric seven-folded quantum-well superlattice separating with very thin barriers

We investigated the photoluminescence (PL) properties of a GaAs/AlAs asymmetric seven-folded quantum well (ASFQW) superlattices (SLs) with thin separating barriers within the ASFQW period. The linearly blue-shifted PL was proportional to the applied bias voltage. By performing a numerical analysis of the electric-field dependence of subband energies in the ASFQW, we concluded that this PL originated from consecutive Γ-X mixings between spatially long-range-separated Γ-subband states and an X-state in this ASFQW. These results indicate that various phenomena appear in ASFQW-SLs due to the increased degree of freedom of carrier transport paths, but a precise analysis of the electric field dependence of subband resonances is required. Therefore, the integrated study of AMQW-SLs definitely reveals new physical properties and leads to the development of new devices.

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Publication Details

Journal
Physica E Low-dimensional Systems and Nanostructures
Published
2024-08-12
DOI
https://doi.org/10.1016/j.physe.2024.116063
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
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article

A 30-nm-tunable photoluminescence caused by remote Γ-X-mixings in a GaAs/AlAs asymmetric seven-folded quantum-well superlattice separating with very thin barriers

M. Hosoda, Ryuto Murohara, Naoki Ohtani, Keisuke Hata et al.
Physica E Low-dimensional Systems and Nanostructures
Semiconductor Quantum Structures and Devices
article

A 30-nm-tunable photoluminescence caused by remote Γ-X-mixings in a GaAs/AlAs asymmetric seven-folded quantum-well superlattice separating with very thin barriers

M. Hosoda, Ryuto Murohara, Naoki Ohtani, Keisuke Hata, Kouichi Akahane, Rui Wang, Kousuke Yoshida
article en

Abstract

We investigated the photoluminescence (PL) properties of a GaAs/AlAs asymmetric seven-folded quantum well (ASFQW) superlattices (SLs) with thin separating barriers within the ASFQW period. The linearly blue-shifted PL was proportional to the applied bias voltage. By performing a numerical analysis of the electric-field dependence of subband energies in the ASFQW, we concluded that this PL originated from consecutive Γ-X mixings between spatially long-range-separated Γ-subband states and an X-state in this ASFQW. These results indicate that various phenomena appear in ASFQW-SLs due to the increased degree of freedom of carrier transport paths, but a precise analysis of the electric field dependence of subband resonances is required. Therefore, the integrated study of AMQW-SLs definitely reveals new physical properties and leads to the development of new devices.

Physica E Low-dimensional Systems and NanostructuresVol. 165
National Institute of Information and Communications Technology (JP)
Openalex Percentile: Top 90%
Semiconductor Quantum Structures and Devices
DOIOpen Access PDFOpenAlex
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A 30-nm-tunable photoluminescence caused by remote Γ-X-mixings in a GaAs/AlAs asymmetric seven-folded quantum-well superlattice separating with very thin barriers — M. Hosoda, Ryuto Murohara, et al. · Physica E Low-dimensional Systems and Nanostructures (2024) | TGRS Research Map | TGRS