Degradation Induced by Total Ionizing Dose and Hot Carrier Injection in SOI FinFET Devices

The working environment of electronic devices in the aerospace field is harsh. In order to ensure the reliable application of the SOI FinFET, the total ionizing dose (TID) and hot carrier injecting (HCI) reliability of an SOI FinFET were investigated in this study. First, the influence of TID on the device was simulated. The results show that TID causes the threshold voltage to decrease and the off-state current and subthreshold swing to increase. TID causes more damage to the device at high temperature and also reduces the saturation drain current of the device. HCI causes the device threshold voltage to increase and the saturation drain current to decrease. The HCI is more severe at high temperatures. Finally, the coupling effects of the two were simulated, and the results show that the two effects cancel each other out, and the degradation of various electrical characteristic parameters is different under different coupling modes.