Impedance Matching Optimization of RF Networks

The subject of this publication is a synthesized description of an S-parameter linear analysis for the improvement of a particular RF amplifier. The model is applied in a simulation environment as a 100–500 MHz two-port device under test with control of the input and output impedance of the RF amplifier. The main goal of the exploration is to achieve a near-perfect impedance match in the input and output stages of a particular RF amplifying schematic. For that purpose, a computing sub-application was created and used in the simulation environment of Keysight Genesys. An appropriate sweep of the parameters’ values of the respective elements of the schematic allows simultaneous changes of the working point position on the diagrams corresponding to the maximum efficient operating mode of the amplifier for the operating frequency range. The upgrade of the initial schematic design usually achieves much better performance and overall behavior of the RF amplifiers from the perspective of the optimum gain and efficiency.