Flexible Exchange‐Biased Films with Superior Strain Stability

Abstract The exchange bias (EB) effect plays an undisputed role in the state‐of‐art spintronic devices, both rigid and flexible. However, the poor stability of EB under mechanical strain is detrimental to the construction of reliable flexible spintronic devices, which poses a great challenge for potential wearable applications. Here, it is revealed that the strain‐induced variation of EB field can be greatly suppressed by engineering flexible IrMn/[Co/Pt] 3 systems featured with perpendicular magnetic anisotropy (PMA). Particularly, in the multi‐stacks with strong PMA, poorly crystallized IrMn structure, and parallel alignment of the ferromagnetic (FM) moments with the biasing magnetic field applied during deposition, an exceptional good strain stability of EB among reported flexible systems is realized, which results from the stable perpendicular FM moments, the low strain transfer efficiency, and the eliminated strain‐driven training effect. These results provide an effective approach to develop flexible spintronic devices with superior strain stability, rendering them strong contenders in the realms of sensor and storage applications.

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Publication Details

Journal
Advanced Functional Materials
Published
2024-08-12
DOI
https://doi.org/10.1002/adfm.202409844
Citations
15
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
5.06

Funders

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article

Flexible Exchange‐Biased Films with Superior Strain Stability

Lin Guo, Ri He, Xilai Bao, Pan Li-li et al.
15 citations
Advanced Functional Materials
Magnetic properties of thin films
5.06
article

Flexible Exchange‐Biased Films with Superior Strain Stability

Lin Guo, Ri He, Xilai Bao, Pan Li-li, Huali Yang, Pavlo Makushko, Denys Makarov, Jinxia Chen, Run‐Wei Li, Tao Zhu, Chenxu Liu, Jiabin Wang, Yubo Wang, Ruoan Zou, Yali Xie, Mengting Zou
article en
15 citations

Abstract

Abstract The exchange bias (EB) effect plays an undisputed role in the state‐of‐art spintronic devices, both rigid and flexible. However, the poor stability of EB under mechanical strain is detrimental to the construction of reliable flexible spintronic devices, which poses a great challenge for potential wearable applications. Here, it is revealed that the strain‐induced variation of EB field can be greatly suppressed by engineering flexible IrMn/[Co/Pt] 3 systems featured with perpendicular magnetic anisotropy (PMA). Particularly, in the multi‐stacks with strong PMA, poorly crystallized IrMn structure, and parallel alignment of the ferromagnetic (FM) moments with the biasing magnetic field applied during deposition, an exceptional good strain stability of EB among reported flexible systems is realized, which results from the stable perpendicular FM moments, the low strain transfer efficiency, and the eliminated strain‐driven training effect. These results provide an effective approach to develop flexible spintronic devices with superior strain stability, rendering them strong contenders in the realms of sensor and storage applications.

Advanced Functional MaterialsVol. 34(51)
Chinese Academy of Sciences (CN), Helmholtz-Zentrum Dresden-Rossendorf (DE), China Spallation Neutron Source (CN), University of Chinese Academy of Sciences (CN), Ningbo Institute of Industrial Technology (CN)
Deutsche Forschungsgemeinschaft, National Natural Science Foundation of China, K. C. Wong Education Foundation, Natural Science Foundation of Ningbo, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Natural Science Foundation of Zhejiang Province
Openalex Percentile: Top 4%
Magnetic properties of thin films
5.06
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