Descripting <b> <i>e</i> </b> <b>+</b> and <b>Weyl fermion</b> as beam/current for pump/injection semiconductor devices

Based on the demand for an improvement in various corpuscle types of current injection, the objective of this technique is to provide a new concept of carrier generators for optoelectronic pump and injection devices. This investigation is conducted to improve current injection by using a particle other than the electron. The idea was conceived from condensed matter physics for a technique to implement positron for carrier transport in semiconductors with the source based on localized emissions. A radioactive source such as 22Na is incident on a tungsten vane moderator, thus having positive electrons flowing and tunneling as well as a laser-driven high-quality positron into semiconductor-based devices. In addition, tantalum arsenide (TaAs) hosting Weyl particles has been discovered to hold significant potential for cutting-edge technological uses. Injection of different carriers and their behavior in semiconductors will lead to the emergence of solid state optoelectronics with different carrier injections that possesses a high energy (100–500 keV) and the possibility of maximum energy that is approximately several tens of megaelectron volts. Significantly, these various carrier sources have a larger range of operational settings and output characteristics due to their various underlying emission principles, thus obtaining a greater kinetic energy for a positron. The transformation to Weyl fermions carries electric charge via a device far more quickly than ordinary electrons, therefore unlocking the potential of new materials with unusual transport properties.