Initialization-Free and Magnetic Field-Free Spin–Orbit p-Bits with Backhopping-like Magnetization Switching for Probabilistic Applications

Probabilistic bits (p-bits) with thermal- and spin torque-induced nondeterministic magnetization switching are promising candidates for performing probabilistic computing. Previously reported spin torque p-bits include volatile low-energy barrier nanomagnets (LBNMs) with spontaneously fluctuating magnetizations and initialization-necessary nonvolatile magnets. However, initialization-free nonvolatile spin torque p-bits are still lacking. Here, we demonstrate moderately thermal stable spin-orbit torque (SOT) p-bits with non-consecutively deposited Pt//Pt/Co/Pt stacks. Backhopping-like (BH) magnetization switching with a wide range current-tunable probability of final up and down magnetization states from 0% to 100% was achieved, regardless of the initial magnetization state, which was attributed to the interplay of SOT and thermal contributions. Integer factorization using such BH-SOT p-bits in zero magnetic field was demonstrated at times that are significantly shorter than those of existing nonvolatile STT or volatile LBNMs p-bits. Our realization of initialization-free and magnetic field-free moderately thermally stable BH-SOT p-bits opens up a new perspective for probabilistic spintronic applications.

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Institutions

Publication Details

Journal
Nano Letters
Published
2024-08-12
DOI
https://doi.org/10.1021/acs.nanolett.4c01989
Citations
11
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
3.71

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article

Initialization-Free and Magnetic Field-Free Spin–Orbit p-Bits with Backhopping-like Magnetization Switching for Probabilistic Applications

Xiukai Lan, Chun Feng, Yicheng Guan, S. Parkin et al.
11 citations
Nano Letters
Magnetic properties of thin films
3.71
article

Initialization-Free and Magnetic Field-Free Spin–Orbit p-Bits with Backhopping-like Magnetization Switching for Probabilistic Applications

Xiukai Lan, Chun Feng, Yicheng Guan, S. Parkin, Baohe Li, Yong Hu, Zeting Du, Yan Liu, Ruizhi Ren, Yi Heng Cao, Zelalem Abebe Bekele, Lijin Wang, Shuai Liu, Nan Zhang, Kaiyou Wang, Guang Yang, Le Wang, Guanghua Yu, Chao Wang
article en
11 citations

Abstract

Probabilistic bits (p-bits) with thermal- and spin torque-induced nondeterministic magnetization switching are promising candidates for performing probabilistic computing. Previously reported spin torque p-bits include volatile low-energy barrier nanomagnets (LBNMs) with spontaneously fluctuating magnetizations and initialization-necessary nonvolatile magnets. However, initialization-free nonvolatile spin torque p-bits are still lacking. Here, we demonstrate moderately thermal stable spin-orbit torque (SOT) p-bits with non-consecutively deposited Pt//Pt/Co/Pt stacks. Backhopping-like (BH) magnetization switching with a wide range current-tunable probability of final up and down magnetization states from 0% to 100% was achieved, regardless of the initial magnetization state, which was attributed to the interplay of SOT and thermal contributions. Integer factorization using such BH-SOT p-bits in zero magnetic field was demonstrated at times that are significantly shorter than those of existing nonvolatile STT or volatile LBNMs p-bits. Our realization of initialization-free and magnetic field-free moderately thermally stable BH-SOT p-bits opens up a new perspective for probabilistic spintronic applications.

Nano LettersVol. 24(33)
Beijing Technology and Business University (CN), Chinese Academy of Sciences (CN), Max Planck Institute of Microstructure Physics (DE), Institute of Semiconductors (CN), Renmin University of China (CN), Beihang University (CN), Northeastern University (CN), University of Science and Technology Beijing (CN)
National Natural Science Foundation of China, Beijing Laboratory of Metallic Materials and Processing for Modern Transportation, Beijing Municipal Natural Science Foundation, Fundamental Research Funds for the Central Universities
Openalex Percentile: Top 6%
Magnetic properties of thin films
3.71
DOISourceOpenAlex
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