Intensity noise reduction in quantum dot comb laser by lower external carrier fluctuations

This work investigates the impact of carrier noise induced by an external current source on the linewidth enhancement factor (LEF) and relative intensity noise (RIN) of a 100 GHz quantum dot fourth-order colliding-pulse mode-locked laser (MLL), driven by a normal pump with Gaussian-distributed carrier sequences and a quiet pump with sub-Poissonian-distributed carrier sequences. The results indicate that under a normal pump, the LEFs are approximately zero for reverse saturable absorber (SA) bias voltages ranging from 0 to 2.5 V, and the laser achieves a RIN as low as -156 dB/Hz. When using a quiet pump, both the LEF and RIN are reduced across all SA bias conditions, particularly at low reverse SA bias voltages. Specifically, the LEF decreases by up to 0.58 at 0 V, and the average RIN spectrum is reduced by more than 3 dB at the same voltage. This work provides a straightforward approach for the development and optimization of multi-channel light sources for dense wavelength division multiplexing (DWDM) technologies with low optical noise.

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Publication Details

Journal
Optics Letters
Published
2024-08-12
DOI
https://doi.org/10.1364/ol.532012
Citations
5
Primary Topic
Advanced Fiber Laser Technologies
Type
article
Field-Weighted Citation Impact
1.69

Funders

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article

Intensity noise reduction in quantum dot comb laser by lower external carrier fluctuations

Zihao Wang, Jianjun Zhang, Yong Yao, Shihao Ding et al.
5 citations
Optics Letters
Advanced Fiber Laser Technologies
1.69
article

Intensity noise reduction in quantum dot comb laser by lower external carrier fluctuations

Zihao Wang, Jianjun Zhang, Yong Yao, Shihao Ding, Frédéric Grillot, Feng He, Jianan Duan, Shiyuan Zhao, Heming Huang, Ting Wang, Wenlu Wang, Xiaochuan Xu
article en
5 citations

Abstract

This work investigates the impact of carrier noise induced by an external current source on the linewidth enhancement factor (LEF) and relative intensity noise (RIN) of a 100 GHz quantum dot fourth-order colliding-pulse mode-locked laser (MLL), driven by a normal pump with Gaussian-distributed carrier sequences and a quiet pump with sub-Poissonian-distributed carrier sequences. The results indicate that under a normal pump, the LEFs are approximately zero for reverse saturable absorber (SA) bias voltages ranging from 0 to 2.5 V, and the laser achieves a RIN as low as -156 dB/Hz. When using a quiet pump, both the LEF and RIN are reduced across all SA bias conditions, particularly at low reverse SA bias voltages. Specifically, the LEF decreases by up to 0.58 at 0 V, and the average RIN spectrum is reduced by more than 3 dB at the same voltage. This work provides a straightforward approach for the development and optimization of multi-channel light sources for dense wavelength division multiplexing (DWDM) technologies with low optical noise.

Optics LettersVol. 49(17)
Chinese Academy of Sciences (CN), Harbin Institute of Technology (CN), Songshan Lake Materials Laboratory (CN), Institut Polytechnique de Paris (FR), Shenzhen Technology University (CN), University of Chinese Academy of Sciences (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China, Shenzhen Science and Technology Innovation Program, Basic and Applied Basic Research Foundation of Guangdong Province
Affordable and clean energy
Openalex Percentile: Top 16%
Advanced Fiber Laser Technologies
1.69
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