GaN Surface Passivation by MoS<sub>2</sub> Coating
In this study, we investigate the impact of two-dimensional MoS<sub>2</sub> coating on the optical properties of surface GaN/AlGaN quantum wells (QWs). A strong enhancement in GaN QW light emission is observed with monolayer-MoS<sub>2</sub> coating, yielding luminescence intensity comparable to that from a QW capped by an AlGaN barrier. Our results demonstrate that MoS<sub>2</sub>, despite its quite different nature from III-nitride semiconductors, acts as an effective barrier for surface GaN QWs and suppresses spatially localized intrinsic surface states. This finding provides novel pathways for efficient III-nitride surface passivation.
Authors
- Danxuan Chen (ORCID: https://orcid.org/0009-0009-0142-0975)
- J.‐F. Carlin (ORCID: https://orcid.org/0000-0002-6140-7723)
- Thomas F. K. Weatherley (ORCID: https://orcid.org/0000-0002-7737-2852)
- N. Grandjean (ORCID: https://orcid.org/0000-0003-3610-981X)
- Mitali Banerjee (ORCID: https://orcid.org/0009-0009-5690-5822)
- Jin Jiang
Institutions
- École Polytechnique Fédérale de Lausanne (CH)
Publication Details
- Journal
- Nano Letters
- Published
- 2024-08-12
- DOI
- https://doi.org/10.1021/acs.nanolett.4c02259
- Citations
- 4
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.24
Funders
- Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung
- Horizon 2020 Framework Programme