Observations of two-dimensional electron gases in AlGaN/GaN high-electron-mobility transistors using up-converted photoluminescence excitation
Up-converted photoluminescence excitation (UPLE) spectra of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates have been investigated. Based on the temperature dependence of UPLE, the 3.335-eV excitation peak is attributed to the two-dimensional electron gases (2DEGs) in the AlGaN/GaN heterostructure. A two-step two-photon absorption process through real intermediate quantum-well states is suggested to be responsible for the up-converted luminescence in the AlGaN/GaN HEMTs.
Authors
- Chi‐Tsu Yuan (ORCID: https://orcid.org/0000-0003-3790-9376)
- Chii-Bin Wu (ORCID: https://orcid.org/0000-0001-9453-4975)
- Ji‐Lin Shen (ORCID: https://orcid.org/0000-0002-6211-5247)
- Wen-Yu Wen (ORCID: https://orcid.org/0000-0001-8854-8473)
- Sheng Hsiung Chang (ORCID: https://orcid.org/0000-0003-1488-1649)
- Lu-Hsun Chen
- Yueh-Jian Lee
- Yu-Ting Chen
- Ching-Hsueh Chiu
- W.J. Hsueh
- Hertz Hsu
Institutions
- Chung Yuan Christian University (TW)
- Lunghwa University of Science and Technology (TW)
Publication Details
- Journal
- Optics Express
- Published
- 2024-08-12
- DOI
- https://doi.org/10.1364/oe.533392
- Citations
- 4
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.24