A 0.1-to-4.3-GHz Variable-Gain Balun LNA With Dual-Path Noise-Canceling Technique

This article introduces a variable-gain low-noise amplifier (VG-LNA) designed for IoT applications. The VG-LNA utilizes a similar architecture to the gm-boost input topology to address input impedance matching degradation during gain adjustment. In addition, it incorporates a dual noise cancellation (NC) path to reduce thermal noise. Due to the differential output characteristics of this topology, this LNA can simultaneously realize the balun function. Fabricated using a 65-nm CMOS process and without ON-chip inductors, the VG-LNA occupies only 0.002 mm2 of the core area. The VG-LNA achieves a turntable voltage gain range of 4.1–20 dB, an IIP3 range of -5.3–6.2 dBm, and a noise figure (NF) range of 1.8–6.8 dB over a 3-dB bandwidth across 0.1–4.3 GHz.

Authors

Institutions

Publication Details

Journal
IEEE Transactions on Microwave Theory and Techniques
Published
2024-08-12
DOI
https://doi.org/10.1109/tmtt.2024.3434342
Citations
7
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
1.46

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

A 0.1-to-4.3-GHz Variable-Gain Balun LNA With Dual-Path Noise-Canceling Technique

Xiaoteng Zhao, Jianhang Yang, Zhangming Zhu, Depeng Sun et al.
7 citations
IEEE Transactions on Microwave Theory and Techniques
Radio Frequency Integrated Circuit Design
1.46
article

A 0.1-to-4.3-GHz Variable-Gain Balun LNA With Dual-Path Noise-Canceling Technique

Xiaoteng Zhao, Jianhang Yang, Zhangming Zhu, Depeng Sun, Shubin Liu, Rong Zhou
article en
7 citations

Abstract

This article introduces a variable-gain low-noise amplifier (VG-LNA) designed for IoT applications. The VG-LNA utilizes a similar architecture to the gm-boost input topology to address input impedance matching degradation during gain adjustment. In addition, it incorporates a dual noise cancellation (NC) path to reduce thermal noise. Due to the differential output characteristics of this topology, this LNA can simultaneously realize the balun function. Fabricated using a 65-nm CMOS process and without ON-chip inductors, the VG-LNA occupies only 0.002 mm2 of the core area. The VG-LNA achieves a turntable voltage gain range of 4.1–20 dB, an IIP3 range of -5.3–6.2 dBm, and a noise figure (NF) range of 1.8–6.8 dB over a 3-dB bandwidth across 0.1–4.3 GHz.

IEEE Transactions on Microwave Theory and TechniquesVol. 73(2)
Xidian University (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 18%
Radio Frequency Integrated Circuit Design
1.46
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.