Effect of MoO₃ HTL on the Performance of ITO/ZnO CQDs/F8BT:TIPS-Pentacene/MoO₃/Ag UV-Visible Photodetector

The n-type zinc oxide (ZnO) colloidal quantum dots (CQDs) and p-type blended poly(9,9-dioctylfluorene-alcohol-benzothiadiazol) (F8BT):6,13-bis (tri-isopropyl-silylethynyl) pentacene (TIPS-P) nanocomposite-based heterojunction fabricated on indium tin oxide (ITO)-coated substrate are explored for ultraviolet (UV)-visible photodetection. The effect of MoO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> hole-transporting layer (HTL) on the performance of the proposed ITO/ZnO CQDs/F8BT:TIPS-P/MoO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub>/Ag photodetector structure has been investigated. Under -1 V reverse bias, the maximum responsivity and specific detectivity were improved in the UV region from 29.60 to 70.20 A/W and from <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$6.35\times 10^{{12}}$ </tex-math></inline-formula> Jones to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$3.97\times 10^{{13}}$ </tex-math></inline-formula> Jones at ~385 nm (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$17.43~\mu $ </tex-math></inline-formula>W/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> intensity), respectively, by using the MoO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> HTL in the device. On the other hand, the maximum responsivity and specific detectivity were improved, respectively, from 13.68 to 40.92 A/W and from <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2.93\times 10^{{12}}$ </tex-math></inline-formula> to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2.08\times 10^{{13}}$ </tex-math></inline-formula> Jones in the visible region at 470 nm (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$35.94~\mu $ </tex-math></inline-formula>W/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> intensity) due to the use of the MoO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> HTL under -1 V reverse bias.

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Publication Details

Journal
IEEE Transactions on Electron Devices
Published
2024-08-12
DOI
https://doi.org/10.1109/ted.2024.3438109
Citations
4
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
0.47

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article

Effect of MoO₃ HTL on the Performance of ITO/ZnO CQDs/F8BT:TIPS-Pentacene/MoO₃/Ag UV-Visible Photodetector

Satyabrata Jit, Shweta Tripathi, Abhinav Pratap Singh
4 citations
IEEE Transactions on Electron Devices
Ga2O3 and related materials
0.47
article

Effect of MoO₃ HTL on the Performance of ITO/ZnO CQDs/F8BT:TIPS-Pentacene/MoO₃/Ag UV-Visible Photodetector

Satyabrata Jit, Shweta Tripathi, Abhinav Pratap Singh
article en
4 citations

Abstract

The n-type zinc oxide (ZnO) colloidal quantum dots (CQDs) and p-type blended poly(9,9-dioctylfluorene-alcohol-benzothiadiazol) (F8BT):6,13-bis (tri-isopropyl-silylethynyl) pentacene (TIPS-P) nanocomposite-based heterojunction fabricated on indium tin oxide (ITO)-coated substrate are explored for ultraviolet (UV)-visible photodetection. The effect of MoO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> hole-transporting layer (HTL) on the performance of the proposed ITO/ZnO CQDs/F8BT:TIPS-P/MoO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub>/Ag photodetector structure has been investigated. Under -1 V reverse bias, the maximum responsivity and specific detectivity were improved in the UV region from 29.60 to 70.20 A/W and from <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$6.35\times 10^{{12}}$ </tex-math></inline-formula> Jones to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$3.97\times 10^{{13}}$ </tex-math></inline-formula> Jones at ~385 nm (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$17.43~\mu $ </tex-math></inline-formula>W/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> intensity), respectively, by using the MoO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> HTL in the device. On the other hand, the maximum responsivity and specific detectivity were improved, respectively, from 13.68 to 40.92 A/W and from <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2.93\times 10^{{12}}$ </tex-math></inline-formula> to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2.08\times 10^{{13}}$ </tex-math></inline-formula> Jones in the visible region at 470 nm (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$35.94~\mu $ </tex-math></inline-formula>W/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> intensity) due to the use of the MoO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> HTL under -1 V reverse bias.

IEEE Transactions on Electron DevicesVol. 71(10)
Motilal Nehru National Institute of Technology (IN), Indian Institute of Technology BHU (IN), Banaras Hindu University (IN)
Department of Science and Technology, Government of Kerala
Openalex Percentile: Top 46%
Ga2O3 and related materials
0.47
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