Enhanced Memory Window and Excellent Endurance in FeFET With Ultrathin 2DEG Oxide Channel

We have proposed a high-performance channel material with an ultra-thin interface layer between TiO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> and AlO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub>, which is a two-dimensional electron gas (2DEG)-based ferroelectric field effect transistor (FeFET). The minimal thickness of the 2DEG channel layer ensures it can be fully depleted during the erase operation, enabling a completely erased state and boosting the memory window (MW) close to its theoretical maximum. Modeling-guided optimization of the 2DEG layer increased the MW up to 4 V. Consequently, the 2DEG FeFET achieves a substantial MW of 4.2 V, aligning closely with theoretical predictions. Additionally, the device displays outstanding reliability, such as endurance of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{9}}$ </tex-math></inline-formula> cycles and retention of 10 years at 85°.