WSe₂ and MoS₂ Nanocomposite-Based Efficient Broadband Photodetector

This letter reports a Al/WSe2:MoS2/ITO coated PET structure based broadband photodetector. The device utilizes WSe2: MoS2 nanocomposite (NC) as an active layer prepared using dispersion method. The nanocomposite film was deposited over ITO coated PET through spin coating technique. The Al contacts were deposited over WSe2: MoS2 nanocomposite by means of thermal evaporation unit. The proposed photodetector exhibits a broad photo response with maximum responsivity <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text {R}_{\text {S}}$ </tex-math></inline-formula>(A/W) of 10.75 A/W, 85.45 A/W, and 146.96 A/W; at 350nm (UV), 750nm (visible) and 900nm (IR) at -1V bias. The nanocomposite shows promising characteristics for optoelectronic application. WSe2:MoS2 NC shows a wide absorbance spectra, covering ultraviolet (UV)-visible-near infrared (NIR) regions.

Authors

Institutions

Publication Details

Journal
IEEE Photonics Technology Letters
Published
2024-08-12
DOI
https://doi.org/10.1109/lpt.2024.3441749
Citations
4
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.83
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

WSe₂ and MoS₂ Nanocomposite-Based Efficient Broadband Photodetector

Shweta Tripathi, Ajay Kumar Dwivedi, R. K. Nagaria, Tulika Bajpai et al.
4 citations
IEEE Photonics Technology Letters
Chalcogenide Semiconductor Thin Films
0.83
article

WSe₂ and MoS₂ Nanocomposite-Based Efficient Broadband Photodetector

Shweta Tripathi, Ajay Kumar Dwivedi, R. K. Nagaria, Tulika Bajpai, Saumya Tripathi
article en
4 citations

Abstract

This letter reports a Al/WSe2:MoS2/ITO coated PET structure based broadband photodetector. The device utilizes WSe2: MoS2 nanocomposite (NC) as an active layer prepared using dispersion method. The nanocomposite film was deposited over ITO coated PET through spin coating technique. The Al contacts were deposited over WSe2: MoS2 nanocomposite by means of thermal evaporation unit. The proposed photodetector exhibits a broad photo response with maximum responsivity <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text {R}_{\text {S}}$ </tex-math></inline-formula>(A/W) of 10.75 A/W, 85.45 A/W, and 146.96 A/W; at 350nm (UV), 750nm (visible) and 900nm (IR) at -1V bias. The nanocomposite shows promising characteristics for optoelectronic application. WSe2:MoS2 NC shows a wide absorbance spectra, covering ultraviolet (UV)-visible-near infrared (NIR) regions.

IEEE Photonics Technology LettersVol. 36(18)
Motilal Nehru National Institute of Technology (IN)
Openalex Percentile: Top 27%
Chalcogenide Semiconductor Thin Films
0.83
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.