WSe₂ and MoS₂ Nanocomposite-Based Efficient Broadband Photodetector
This letter reports a Al/WSe2:MoS2/ITO coated PET structure based broadband photodetector. The device utilizes WSe2: MoS2 nanocomposite (NC) as an active layer prepared using dispersion method. The nanocomposite film was deposited over ITO coated PET through spin coating technique. The Al contacts were deposited over WSe2: MoS2 nanocomposite by means of thermal evaporation unit. The proposed photodetector exhibits a broad photo response with maximum responsivity <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text {R}_{\text {S}}$ </tex-math></inline-formula>(A/W) of 10.75 A/W, 85.45 A/W, and 146.96 A/W; at 350nm (UV), 750nm (visible) and 900nm (IR) at -1V bias. The nanocomposite shows promising characteristics for optoelectronic application. WSe2:MoS2 NC shows a wide absorbance spectra, covering ultraviolet (UV)-visible-near infrared (NIR) regions.
Authors
- Shweta Tripathi (ORCID: https://orcid.org/0000-0002-3310-918X)
- Ajay Kumar Dwivedi (ORCID: https://orcid.org/0000-0001-9385-3501)
- R. K. Nagaria (ORCID: https://orcid.org/0000-0003-4137-1759)
- Tulika Bajpai
- Saumya Tripathi
Institutions
- Motilal Nehru National Institute of Technology (IN)
Publication Details
- Journal
- IEEE Photonics Technology Letters
- Published
- 2024-08-12
- DOI
- https://doi.org/10.1109/lpt.2024.3441749
- Citations
- 4
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.83