Rate prediction of decrease in the luminous flux of green InGaN/GaN LEDs during current tests according to the P-I characteristics parameters

Changes in the characteristics of commercial green InGaN/GaN LEDs were investigated when tested under the influence of a pulsed current of increased density for 160 hours and a constant maximum permissible current for 5000 hours. It was shown that the decrease in the luminous flux of the LEDs is accompanied by an increase in the parameter of the function that approximates the P-I characteristic of the LED in the range of microcurrents, which is proportional to the defects density in the LED heterostructure. A strong correlation has been established between the initial value of this parameter and the magnitude of the decline in the luminous flux of LEDs during testing. It has been determined that the parameter of the function that approximates the P-I characteristic of an LED in the low current range can be used as a diagnostic parameter to predict the rate of decline in the luminous flux of an LED during current tests.