Structural Features, Electronic and Spin Transport in Epitaxial Thin Films of Iridates

A technique for obtaining high-quality epitaxial films of iridate (SrIrO3) by high-frequency cathode sputtering on strontium titanate (SrTiO3) and neodymium gallate (NdGaO3) substrates has been developed. The structural features and the influence of mechanical stress relaxation in thin films caused by the difference in the lattice sizes of the film and the substrate have been studied using X-ray diffraction. From the analysis of diffraction data, it was found that lattice parameter deformation is observed in the film. This indicates the emergence of stresses due to the mismatch of the lattice parameters of the film and the substrate, which leads to non-uniform stress relaxation in the film. The electronic transport parameters of thin films and the excitation of spin current in SrIrO3/La0.7Sr0.3MnO3 heterostructures have been investigated.

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Journal
Radioelectronics Nanosystems Information Technologies
Published
2024-08-11
DOI
https://doi.org/10.17725/j.rensit.2024.16.509
Citations
1
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
0.34

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article

Structural Features, Electronic and Spin Transport in Epitaxial Thin Films of Iridates

G. A. Ovsyannikov, A. M. Petrzhik, Yu. V. Kislinskiĭ, A. V. Shadrin et al.
1 citations
Radioelectronics Nanosystems Information Technologies
Semiconductor Quantum Structures and Devices
0.34
article

Structural Features, Electronic and Spin Transport in Epitaxial Thin Films of Iridates

G. A. Ovsyannikov, A. M. Petrzhik, Yu. V. Kislinskiĭ, A. V. Shadrin, I. E. Moskal, K. Y. Constantinian, N. V. Dubitskiy, Victoria A. Baydikova, Georgy D. Ulev
article en
1 citations

Abstract

A technique for obtaining high-quality epitaxial films of iridate (SrIrO3) by high-frequency cathode sputtering on strontium titanate (SrTiO3) and neodymium gallate (NdGaO3) substrates has been developed. The structural features and the influence of mechanical stress relaxation in thin films caused by the difference in the lattice sizes of the film and the substrate have been studied using X-ray diffraction. From the analysis of diffraction data, it was found that lattice parameter deformation is observed in the film. This indicates the emergence of stresses due to the mismatch of the lattice parameters of the film and the substrate, which leads to non-uniform stress relaxation in the film. The electronic transport parameters of thin films and the excitation of spin current in SrIrO3/La0.7Sr0.3MnO3 heterostructures have been investigated.

Radioelectronics Nanosystems Information TechnologiesVol. 16(4)
Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences (RU)
Russian Science Foundation
Openalex Percentile: Top 42%
Semiconductor Quantum Structures and Devices
0.34
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Structural Features, Electronic and Spin Transport in Epitaxial Thin Films of Iridates — G. A. Ovsyannikov, A. M. Petrzhik, et al. · Radioelectronics Nanosystems Information Technologies (2024) | TGRS Research Map | TGRS