TCAD simulations of humidity-induced breakdown of silicon sensors

The breakdown voltage of silicon sensors is known to be affected by the ambient humidity. To understand the sensor’s humidity sensitivity, Synopsys TCAD was used to simulate n-in-p sensors for different effective relative humidities. Photon emission of hot electrons was imaged with a microscope to locate breakdown in the edge-region of the sensor. The Top-Transient Current Technique was used to measure charge transport near the surface in the breakdown region of the sensor. Using the measurements and simulations, the evolution of the electric field with relative humidity and the carrier densities towards breakdown in the periphery of p-bulk silicon sensors are investigated.

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Publication Details

Journal
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
Published
2024-08-10
DOI
https://doi.org/10.1016/j.nima.2024.169729
Citations
2
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
0.42

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article

TCAD simulations of humidity-induced breakdown of silicon sensors

Peng Li, C. E. Jessiman, V. Fadeyev, E. J. Staats et al.
2 citations
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
Advancements in Semiconductor Devices and Circuit Design
0.42
article

TCAD simulations of humidity-induced breakdown of silicon sensors

Peng Li, C. E. Jessiman, V. Fadeyev, E. J. Staats, H. Lacker, T. Koffas, Y. Unno, B. Brüers, C. Klein, M. Ullán, J. Fernández-Tejero, J. Keller, I. Bloch, C. Scharf, I. Ninca
article en
2 citations

Abstract

The breakdown voltage of silicon sensors is known to be affected by the ambient humidity. To understand the sensor’s humidity sensitivity, Synopsys TCAD was used to simulate n-in-p sensors for different effective relative humidities. Photon emission of hot electrons was imaged with a microscope to locate breakdown in the edge-region of the sensor. The Top-Transient Current Technique was used to measure charge transport near the surface in the breakdown region of the sensor. Using the measurements and simulations, the evolution of the electric field with relative humidity and the carrier densities towards breakdown in the periphery of p-bulk silicon sensors are investigated.

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated EquipmentVol. 1067
TRIUMF (CA), High Energy Accelerator Research Organization (JP), Simon Fraser University (CA), University of California, Santa Cruz (US), Humboldt-Universität zu Berlin (DE), Institut de Microelectrònica de Barcelona (ES), Carleton University (CA)
U.S. Department of Energy, Carleton University, TRIUMF, CERN, Canada Foundation for Innovation, Simon Fraser University, Natural Sciences and Engineering Research Council of Canada, European Regional Development Fund, Agencia Estatal de Investigación
Openalex Percentile: Top 39%
Advancements in Semiconductor Devices and Circuit Design
0.42
DOIOpen Access PDFOpenAlex
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