Combining Nitrogen Doping and Vacancies for Tunable Resonant States in Graphite

We investigate the combination of nitrogen doping and vacancies in highly ordered pyrolytic graphite (HOPG), to engineer defect sites with adjustable electronic properties. We combine scanning tunneling microscopy and spectroscopy and density functional theory calculations to reveal the synergistic effects of nitrogen and vacancies in HOPG. Our findings reveal a remarkable shift of the vacancy-induced resonance peak from an unoccupied state in pristine HOPG to an occupied state in nitrogen-doped HOPG. This shift directly correlates with the shift of the charge neutrality point resulting from the n-doping induced by substitutional nitrogen. These results open new avenues for defect engineering in graphite or graphene and achieving novel functionalities for chemical activity or electronic properties.

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Publication Details

Journal
ChemPhysChem
Published
2024-08-09
DOI
https://doi.org/10.1002/cphc.202400221
Primary Topic
Graphene research and applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Combining Nitrogen Doping and Vacancies for Tunable Resonant States in Graphite

Amandine Bellec, Hakim Amara, Philippe Lang, Yann Girard et al.
ChemPhysChem
Graphene research and applications
article

Combining Nitrogen Doping and Vacancies for Tunable Resonant States in Graphite

Amandine Bellec, Hakim Amara, Philippe Lang, Yann Girard, Vincent Repain, Jérôme Lagoute, Abhishek Karn, Cyril Chacon, Demba Demba
article en

Abstract

We investigate the combination of nitrogen doping and vacancies in highly ordered pyrolytic graphite (HOPG), to engineer defect sites with adjustable electronic properties. We combine scanning tunneling microscopy and spectroscopy and density functional theory calculations to reveal the synergistic effects of nitrogen and vacancies in HOPG. Our findings reveal a remarkable shift of the vacancy-induced resonance peak from an unoccupied state in pristine HOPG to an occupied state in nitrogen-doped HOPG. This shift directly correlates with the shift of the charge neutrality point resulting from the n-doping induced by substitutional nitrogen. These results open new avenues for defect engineering in graphite or graphene and achieving novel functionalities for chemical activity or electronic properties.

ChemPhysChemVol. 25(21)
Centre National de la Recherche Scientifique (FR), Université Paris Cité (FR), Université Paris-Saclay (FR), Office National d'Études et de Recherches Aérospatiales (FR), Interfaces Traitements Organisation et Dynamique des Systèmes (FR), Laboratoire d'Étude des Microstructures (FR), Laboratoire Matériaux et Phénomènes Quantiques (FR)
Agence Nationale de la Recherche, Centre National de la Recherche Scientifique
Openalex Percentile: Top 93%
Graphene research and applications
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Combining Nitrogen Doping and Vacancies for Tunable Resonant States in Graphite — Amandine Bellec, Hakim Amara, et al. · ChemPhysChem (2024) | TGRS Research Map | TGRS