Unveiling Double A-Site Cation Perovskite-Inspired Materials: From 0D-Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> to 2D-Cs<sub>2</sub>AgBi<sub>2</sub>I<sub>9</sub> with Enhanced Charge Transport

Bismuth-based halideperovskite-inspired materials (PIMs) are gaining increasing attention as sustainable and stable alternatives to lead halide perovskites. However, many PIMs have wide band gaps (≥2 eV) and low electronic dimensionality, limiting their utility in optoelectronic applications. In this study, we introduce Cs2AgBi2I9, a two-dimensional perovskite-inspired absorber achieved through partial substitution of Cs+ with Ag+ at the A-site of Cs3Bi2I9. Single-crystal X-ray diffraction analysis reveals that silver atoms occupy the edge sites in the hexagonal lattice, resulting in contracted lattice parameters compared to the parent Cs3Bi2I9. The double A-cation substitution promotes orbital overlap between Ag 5s and I 6p orbitals, leading to a narrower band gap of 1.72 eV and a delocalized electronic structure in Cs2AgBi2I9. Consequently, the 2D-PIM exhibits a three-orders-of-magnitude lower electrical resistivity and an exceptional carrier mobility-lifetime product (μτ) of 3.4 × 10–3 cm2 V–1, representing the highest among solution-processed Bi-PIMs. Furthermore, low-temperature photoluminescence measurements indicate weak electron–phonon coupling, while transient absorption spectroscopy reveals extended hot-carrier lifetimes, suggesting efficient exciton transport in Cs2AgBi2I9. Utilizing these exceptional charge transport properties, Cs2AgBi2I9 photodetectors show a remarkable broad spectral response. This work demonstrates the potential of a double A-site cation engineering strategy to develop low-toxicity PIMs with precisely tailored structural and optoelectronic properties.

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Journal
Chemistry of Materials
Published
2024-08-09
DOI
https://doi.org/10.1021/acs.chemmater.4c01045
Citations
3
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
0.63

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article

Unveiling Double A-Site Cation Perovskite-Inspired Materials: From 0D-Cs3Bi2I9 to 2D-Cs2AgBi2I9 with Enhanced Charge Transport

K. D. M. Rao, Md Sariful Sheikh, Asha Singh, S. Khan et al.
3 citations
Chemistry of Materials
Perovskite Materials and Applications
0.63
article

Unveiling Double A-Site Cation Perovskite-Inspired Materials: From 0D-Cs3Bi2I9 to 2D-Cs2AgBi2I9 with Enhanced Charge Transport

K. D. M. Rao, Md Sariful Sheikh, Asha Singh, S. Khan, Manohar Chirumamilla, Paola Vivo, Praveen Kumar Velpula, Mozakkar Hossain, G. Krishnamurthy Grandhi, Sandeep K. Reddy, Ankita Narwal, Sharma S. R. K. C. Yamijala, Kiran Vankayala, Kuntal Singh, Saleem Khan
article en
3 citations

Abstract

Bismuth-based halideperovskite-inspired materials (PIMs) are gaining increasing attention as sustainable and stable alternatives to lead halide perovskites. However, many PIMs have wide band gaps (≥2 eV) and low electronic dimensionality, limiting their utility in optoelectronic applications. In this study, we introduce Cs2AgBi2I9, a two-dimensional perovskite-inspired absorber achieved through partial substitution of Cs+ with Ag+ at the A-site of Cs3Bi2I9. Single-crystal X-ray diffraction analysis reveals that silver atoms occupy the edge sites in the hexagonal lattice, resulting in contracted lattice parameters compared to the parent Cs3Bi2I9. The double A-cation substitution promotes orbital overlap between Ag 5s and I 6p orbitals, leading to a narrower band gap of 1.72 eV and a delocalized electronic structure in Cs2AgBi2I9. Consequently, the 2D-PIM exhibits a three-orders-of-magnitude lower electrical resistivity and an exceptional carrier mobility-lifetime product (μτ) of 3.4 × 10–3 cm2 V–1, representing the highest among solution-processed Bi-PIMs. Furthermore, low-temperature photoluminescence measurements indicate weak electron–phonon coupling, while transient absorption spectroscopy reveals extended hot-carrier lifetimes, suggesting efficient exciton transport in Cs2AgBi2I9. Utilizing these exceptional charge transport properties, Cs2AgBi2I9 photodetectors show a remarkable broad spectral response. This work demonstrates the potential of a double A-site cation engineering strategy to develop low-toxicity PIMs with precisely tailored structural and optoelectronic properties.

Chemistry of Materials
Raja Ramanna Centre for Advanced Technology (IN), Indian Institute of Technology Kharagpur (IN), Universität Hamburg (DE), Indian Association for the Cultivation of Science (IN), Tampere University (FI), Homi Bhabha National Institute (IN), Indian Institute of Technology Madras (IN), UGC DAE Consortium for Scientific Research (IN), Birla Institute of Technology and Science, Pilani (IN), Hamburg University of Technology (DE), Aalborg University (DK)
Department of Science and Technology, Ministry of Science and Technology, India, Council of Scientific and Industrial Research, India, Academy of Finland, Indian Institute of Technology Madras, Ministry of Education, India, Birla Institute of Technology and Science, Pilani, Ministry of Electronics and Information technology, Indian Institute of Technology Kharagpur, Science and Engineering Research Board, UGC-DAE Consortium for Scientific Research, University Grants Commission, Northwest Fisheries Science Center
Sustainable cities and communities
Openalex Percentile: Top 32%
Perovskite Materials and Applications
0.63
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