Temperature Measurement of a Nanowire SOI Transistor Using a Parallel Gated SOI PIN Diode
This paper outlines a technique for measuring the temperature rise in a nanowire SOI MOSFET, caused by the self-heating effect, utilizing a parallel gated PIN diode. The analysis is conducted through electrothermal 3D TCAD simulations across an environment temperature range of 300K to 600K. Additionally, the impact of the separation distance between the nanowire MOSFET and the PIN diode is thoroughly examined.
Authors
- Marcelo Antonio Pavanello (ORCID: https://orcid.org/0000-0003-1361-3650)
- Felipe Rodrigues Gare Carnielli
Institutions
- Centro Universitário FEI (BR)
Publication Details
- Journal
- Journal of Integrated Circuits and Systems
- Published
- 2024-08-01
- DOI
- https://doi.org/10.29292/jics.v19i2.818
- Citations
- 2
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.42
Funders
- Fundação de Amparo à Pesquisa do Estado de São Paulo
- Conselho Nacional de Desenvolvimento Científico e Tecnológico