Effect of multiple conductions on basic parameters in linear and saturation regions for a MIS-HEMT from 450 K down to 200 K
In this work, the effect of multiple conductions on the basic parameters in linear and saturation regions of a GaN based Metal-Insulator-Semiconductor High Electron Mobility Transistor (MIS-HEMT), when operating in a temperature range from 450 K down to 200 K, is evaluated experimentally. The threshold voltage behavior suggests that the HEMT conduction is dominating the device for low temperatures, while the MOS conduction is the dominant one for high temperatures. It is also shown that the presence of a high gate leakage current is degrading the switching efficiency and the ION/IOFF ratio of the device. The device presents a minimum Drain Induced Barrier Lowering (DIBL) of 27 mV/V (at 300 K) and the maximum of 62 mV/V (at 450 K).
Authors
- Welder F. Perina (ORCID: https://orcid.org/0000-0001-6205-351X)
- Paula Ghedini Der Agopian (ORCID: https://orcid.org/0000-0002-0886-7798)
- Eddy Simoen (ORCID: https://orcid.org/0000-0002-5218-4046)
- Nadine Collaert (ORCID: https://orcid.org/0000-0002-8062-3165)
- João Antônio Martino (ORCID: https://orcid.org/0000-0001-8121-6513)
- Uthayasankaran Peralagu (ORCID: https://orcid.org/0000-0001-9166-4408)
Institutions
- Fundação de Apoio à Universidade Federal de São Paulo (BR)
- IMEC (BE)
- Universidade Estadual Paulista (Unesp) (BR)
Publication Details
- Journal
- Journal of Integrated Circuits and Systems
- Published
- 2024-08-01
- DOI
- https://doi.org/10.29292/jics.v19i2.812
- Citations
- 1
- Primary Topic
- Magnetic Properties and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.12
Funders
- Fundação de Amparo à Pesquisa do Estado de São Paulo
- Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
- Conselho Nacional de Desenvolvimento Científico e Tecnológico