Characterization of Switching Properties in ReRAM Devices by the Capacitance of the MIM Structure

In this article, an analysis of the switching mechanism in Resistive Random-Access-Memory devices in relation to the capacitance variation of the Metal-Insulator-Metal structure is performed through experimental capacitance measurements. A variation in the capacitance was observed when a set of pulses with different widths and amplitudes was applied to the devices in the Multi-Level-Cell regime. The presence of multiple resistive states can be observed also with the changes in the dielectric constant of the material’s insulating layer. The migration of the defects inside dielectric is responsible for the devices exhibiting multiple capacitive reactance states, demonstrating the quantization of the conductance, required for the application in in-memory computing systems.