Design and evaluation of β-Ga₂O₃ junction barrier schottky diode with p-GaN heterojunction

Abstract A novel design for a junction barrier Schottky (JBS) diode based on a p-GaN/n-Ga 2 O 3 heterojunction is proposed, exhibiting superior static characteristics and a higher breakdown capability compared to the traditional Ga 2 O 3 Schottky barrier diode (SBD). By utilizing wide-bandgap p-type GaN, the β -Ga 2 O 3 JBS diodes demonstrate a turn-on voltage ( V on ) of approximately 0.8 V. Moreover, a breakdown voltage ( V br ) of 880 V and a specific on-resistance ( R on,sp ) of 3.96 mΩ·cm 2 are achieved, resulting in a Baliga’s figure of merit (BFOM) of approximately 0.2 GW /cm 2 . A forward current density of 465 A cm −2 at a forward voltage of 3 V is attained. The simulated reverse leakage current density remains low at 9.0 mA cm −2 at 800 V. Floating field rings, in conjunction with junction termination extension (JTE), were utilized as edge termination methods to attain a high breakdown voltage. The impact of β -Ga 2 O 3 periodic fin width fluctuations on the electrical characteristics of JBS was investigated. Due to the enhanced sidewall depletion effect caused by p-type GaN, the forward current ( I F ) and reverse current ( I R ) decrease when the β -Ga 2 O 3 periodic fin width decreases. The findings of this study indicate the remarkable promise of p-GaN/n-Ga 2 O 3 JBS diodes for power device applications.