Frequency-dependent capacitance and conductance characteristics and current transport mechanisms of Schottky diodes with TPA-IFA organic interfacial layer

Abstract In this study, a Schottky barrier diode with an Al/TPA-IFA/p-Si structure was fabricated using spin coating and thermal evaporation methods. Using forward and reverse bias <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mi>I</mml:mi> <mml:mi>–</mml:mi> <mml:mi>V</mml:mi> </mml:math> measurement, we examined the key electrical characteristics of the Al/TPA-IFA/p-Si diode, including <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi mathvariant="normal">Φ</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>b</mml:mi> </mml:mrow> </mml:msub> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mi>n</mml:mi> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>R</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>s</mml:mi> </mml:mrow> </mml:msub> <mml:mo>,</mml:mo> </mml:math> and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>N</mml:mi> </mml:mrow> <mml:mrow> <mml:mi mathvariant="italic">ss</mml:mi> </mml:mrow> </mml:msub> <mml:mo>;</mml:mo> </mml:math> we also estimated <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>V</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>D</mml:mi> </mml:mrow> </mml:msub> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>N</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>A</mml:mi> </mml:mrow> </mml:msub> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>E</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>F</mml:mi> </mml:mrow> </mml:msub> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mo>∆</mml:mo> <mml:mi mathvariant="normal">Φ</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>b</mml:mi> </mml:mrow> </mml:msub> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>W</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>D</mml:mi> </mml:mrow> </mml:msub> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi mathvariant="normal">Φ</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>b</mml:mi> </mml:mrow> </mml:msub> </mml:math> and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>N</mml:mi> </mml:mrow> <mml:mrow> <mml:mi mathvariant="italic">ss</mml:mi> </mml:mrow> </mml:msub> </mml:math> using <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mi>C</mml:mi> <mml:mi>–</mml:mi> <mml:mi>V</mml:mi> </mml:math> measurements under the different frequencies (10, 50, 100, 500 kHz, and 1 MHz) at room temperature. Using <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mi>I</mml:mi> <mml:mi>–</mml:mi> <mml:mi>V</mml:mi> </mml:math> data and the Thermionic Emission (TE) theory, basic electrical parameters such as ideality factor ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mi>n</mml:mi> </mml:math> ), and barrier height ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi mathvariant="normal">Φ</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>b</mml:mi> </mml:mrow> </mml:msub> </mml:math> ) values were computed as 3.01 and 0.716 eV. The fundamental diode parameters are highly frequency-dependent. It was also found that the series Resistance ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>R</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>s</mml:mi> </mml:mrow> </mml:msub> </mml:math> ) v

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Journal
Physica Scripta
Published
2024-08-09
DOI
https://doi.org/10.1088/1402-4896/ad6dab
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7
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Semiconductor materials and interfaces
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article
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article

Frequency-dependent capacitance and conductance characteristics and current transport mechanisms of Schottky diodes with TPA-IFA organic interfacial layer

Pınar Oruç, Nihat Tuğluoğlu, Şükrü Çavdar, Serkan Eymür
7 citations
Physica Scripta
Semiconductor materials and interfaces
2.36
article

Frequency-dependent capacitance and conductance characteristics and current transport mechanisms of Schottky diodes with TPA-IFA organic interfacial layer

Pınar Oruç, Nihat Tuğluoğlu, Şükrü Çavdar, Serkan Eymür
article en
7 citations

Abstract

Abstract In this study, a Schottky barrier diode with an Al/TPA-IFA/p-Si structure was fabricated using spin coating and thermal evaporation methods. Using forward and reverse bias <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mi>I</mml:mi> <mml:mi>–</mml:mi> <mml:mi>V</mml:mi> </mml:math> measurement, we examined the key electrical characteristics of the Al/TPA-IFA/p-Si diode, including <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi mathvariant="normal">Φ</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>b</mml:mi> </mml:mrow> </mml:msub> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mi>n</mml:mi> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>R</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>s</mml:mi> </mml:mrow> </mml:msub> <mml:mo>,</mml:mo> </mml:math> and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>N</mml:mi> </mml:mrow> <mml:mrow> <mml:mi mathvariant="italic">ss</mml:mi> </mml:mrow> </mml:msub> <mml:mo>;</mml:mo> </mml:math> we also estimated <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>V</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>D</mml:mi> </mml:mrow> </mml:msub> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>N</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>A</mml:mi> </mml:mrow> </mml:msub> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>E</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>F</mml:mi> </mml:mrow> </mml:msub> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mo>∆</mml:mo> <mml:mi mathvariant="normal">Φ</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>b</mml:mi> </mml:mrow> </mml:msub> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>W</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>D</mml:mi> </mml:mrow> </mml:msub> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi mathvariant="normal">Φ</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>b</mml:mi> </mml:mrow> </mml:msub> </mml:math> and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>N</mml:mi> </mml:mrow> <mml:mrow> <mml:mi mathvariant="italic">ss</mml:mi> </mml:mrow> </mml:msub> </mml:math> using <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mi>C</mml:mi> <mml:mi>–</mml:mi> <mml:mi>V</mml:mi> </mml:math> measurements under the different frequencies (10, 50, 100, 500 kHz, and 1 MHz) at room temperature. Using <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mi>I</mml:mi> <mml:mi>–</mml:mi> <mml:mi>V</mml:mi> </mml:math> data and the Thermionic Emission (TE) theory, basic electrical parameters such as ideality factor ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mi>n</mml:mi> </mml:math> ), and barrier height ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi mathvariant="normal">Φ</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>b</mml:mi> </mml:mrow> </mml:msub> </mml:math> ) values were computed as 3.01 and 0.716 eV. The fundamental diode parameters are highly frequency-dependent. It was also found that the series Resistance ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>R</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>s</mml:mi> </mml:mrow> </mml:msub> </mml:math> ) v

Physica ScriptaVol. 99(9)
Giresun University (TR), Gazi University (TR)
Affordable and clean energy
Openalex Percentile: Top 11%
Semiconductor materials and interfaces
2.36
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