Frequency-dependent capacitance and conductance characteristics and current transport mechanisms of Schottky diodes with TPA-IFA organic interfacial layer
Abstract In this study, a Schottky barrier diode with an Al/TPA-IFA/p-Si structure was fabricated using spin coating and thermal evaporation methods. Using forward and reverse bias <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mi>I</mml:mi> <mml:mi>–</mml:mi> <mml:mi>V</mml:mi> </mml:math> measurement, we examined the key electrical characteristics of the Al/TPA-IFA/p-Si diode, including <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi mathvariant="normal">Φ</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>b</mml:mi> </mml:mrow> </mml:msub> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mi>n</mml:mi> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>R</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>s</mml:mi> </mml:mrow> </mml:msub> <mml:mo>,</mml:mo> </mml:math> and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>N</mml:mi> </mml:mrow> <mml:mrow> <mml:mi mathvariant="italic">ss</mml:mi> </mml:mrow> </mml:msub> <mml:mo>;</mml:mo> </mml:math> we also estimated <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>V</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>D</mml:mi> </mml:mrow> </mml:msub> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>N</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>A</mml:mi> </mml:mrow> </mml:msub> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>E</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>F</mml:mi> </mml:mrow> </mml:msub> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mo>∆</mml:mo> <mml:mi mathvariant="normal">Φ</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>b</mml:mi> </mml:mrow> </mml:msub> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>W</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>D</mml:mi> </mml:mrow> </mml:msub> <mml:mo>,</mml:mo> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi mathvariant="normal">Φ</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>b</mml:mi> </mml:mrow> </mml:msub> </mml:math> and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>N</mml:mi> </mml:mrow> <mml:mrow> <mml:mi mathvariant="italic">ss</mml:mi> </mml:mrow> </mml:msub> </mml:math> using <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mi>C</mml:mi> <mml:mi>–</mml:mi> <mml:mi>V</mml:mi> </mml:math> measurements under the different frequencies (10, 50, 100, 500 kHz, and 1 MHz) at room temperature. Using <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mi>I</mml:mi> <mml:mi>–</mml:mi> <mml:mi>V</mml:mi> </mml:math> data and the Thermionic Emission (TE) theory, basic electrical parameters such as ideality factor ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mi>n</mml:mi> </mml:math> ), and barrier height ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi mathvariant="normal">Φ</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>b</mml:mi> </mml:mrow> </mml:msub> </mml:math> ) values were computed as 3.01 and 0.716 eV. The fundamental diode parameters are highly frequency-dependent. It was also found that the series Resistance ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>R</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>s</mml:mi> </mml:mrow> </mml:msub> </mml:math> ) v
Authors
- Pınar Oruç (ORCID: https://orcid.org/0000-0002-5837-7412)
- Nihat Tuğluoğlu (ORCID: https://orcid.org/0000-0001-9428-4347)
- Şükrü Çavdar (ORCID: https://orcid.org/0000-0001-6079-7048)
- Serkan Eymür (ORCID: https://orcid.org/0000-0003-3346-6010)
Institutions
- Giresun University (TR)
- Gazi University (TR)
Publication Details
- Journal
- Physica Scripta
- Published
- 2024-08-09
- DOI
- https://doi.org/10.1088/1402-4896/ad6dab
- Citations
- 7
- Primary Topic
- Semiconductor materials and interfaces
- Type
- article
- Field-Weighted Citation Impact
- 2.36