Obtained Berry phase and cyclotron mass of Bi₂Se₃ topological insulator thin film through weak anti-localization and Shubnikov-de haas oscillation studies

Abstract Bi-based binary alloys have drawn enormous attention in modern condensed matter research for their novel topological property. Here, we have explored the quantum-transport properties of a 100 nm Bi 2 Se 3 topological insulator thin film grown by an indigenously developed electron-beam-evaporator through co-deposition technique. A detailed study about the structural, elemental, and morphological analysis has been presented through the GI-XRD, Raman spectroscopy, XPS, EDX, SEM, and AFM characterization. Finally, we have investigated the angle and temperature-dependent magneto-conductance properties of our deposited films, which indicate the surface-electron dominated quantum-transport has occurred. Interestingly, our Bi 2 Se 3 film exhibits 2D weak anti-localization and Subnikov-de Hass oscillation features. From which some novel topological parameters are explored, such as, Berry phase ( β ), phase-coherence-length (l ϕ ), Fermi velocity (v F ), wave vector (k F ), Dingle temperature (T D ), quantum mobility ( μ q ), and cyclotron mass (m c ). The estimated β = 0.7 π and m c = 0.17m e , indicate that the topologically protected massless Dirac particles can be achieved in this kind of system.