Modifying the high‐temperature dielectric properties of PLZT antiferroelectric ceramics by donor‒acceptor codoping

Abstract (Pb,La)(Zr,Ti)O 3 antiferroelectric (AFE) ceramics have attracted considerable interest due to their high‐energy storage density and numerous field‐induced phase transitions. However, the positional equilibrium of the A‐site and B‐site is typically maintained without considering that heterovalent doping of La 3+ can induce defects within the material, leading to high‐temperature leakage conduction. In this work, we introduced the acceptor ion Na + at the A‐site simultaneously and designed Pb 0.9175–0.5 x La 0.055 Na x Zr 0.975 Ti 0.025 O 3 ( x = 0.01, 0.03, 0.055, 0.07, 0.10) AFE ceramics. The dielectric properties of these ceramics exhibited a consistent pattern of improvement followed by deterioration as the content of Na + increased. Notably, when x = 0.055 (Na5.5), the AFE ceramic demonstrated superior high‐temperature frequency stability with negligible leakage conduction. Impedance spectroscopy analysis suggested that Na5.5 displays the greatest resistance and highest E dc . Concurrently, the thermally stimulated depolarization current indicates that Na5.5 possesses the lowest defect concentration and the largest E a . This can be attributed to the internal generation of defect dipole clusters (), which effectively restrict the movement of charged defects. These findings suggest that Na5.5 holds significant potential for application and offer insights into the understanding of internal defects in lead‐based AFE materials.

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Publication Details

Journal
Journal of the American Ceramic Society
Published
2024-08-08
DOI
https://doi.org/10.1111/jace.20045
Citations
2
Primary Topic
Ferroelectric and Piezoelectric Materials
Type
article
Field-Weighted Citation Impact
0.23

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article

Modifying the high‐temperature dielectric properties of PLZT antiferroelectric ceramics by donor‒acceptor codoping

Yongxin Zhou, Xuefeng Chen, Linhai Li, Genshui Wang
2 citations
Journal of the American Ceramic Society
Ferroelectric and Piezoelectric Materials
0.23
article

Modifying the high‐temperature dielectric properties of PLZT antiferroelectric ceramics by donor‒acceptor codoping

Yongxin Zhou, Xuefeng Chen, Linhai Li, Genshui Wang
article en
2 citations

Abstract

Abstract (Pb,La)(Zr,Ti)O 3 antiferroelectric (AFE) ceramics have attracted considerable interest due to their high‐energy storage density and numerous field‐induced phase transitions. However, the positional equilibrium of the A‐site and B‐site is typically maintained without considering that heterovalent doping of La 3+ can induce defects within the material, leading to high‐temperature leakage conduction. In this work, we introduced the acceptor ion Na + at the A‐site simultaneously and designed Pb 0.9175–0.5 x La 0.055 Na x Zr 0.975 Ti 0.025 O 3 ( x = 0.01, 0.03, 0.055, 0.07, 0.10) AFE ceramics. The dielectric properties of these ceramics exhibited a consistent pattern of improvement followed by deterioration as the content of Na + increased. Notably, when x = 0.055 (Na5.5), the AFE ceramic demonstrated superior high‐temperature frequency stability with negligible leakage conduction. Impedance spectroscopy analysis suggested that Na5.5 displays the greatest resistance and highest E dc . Concurrently, the thermally stimulated depolarization current indicates that Na5.5 possesses the lowest defect concentration and the largest E a . This can be attributed to the internal generation of defect dipole clusters (), which effectively restrict the movement of charged defects. These findings suggest that Na5.5 holds significant potential for application and offer insights into the understanding of internal defects in lead‐based AFE materials.

Journal of the American Ceramic SocietyVol. 107(12)
Chinese Academy of Sciences (CN), ShanghaiTech University (CN), Shanghai Institute of Ceramics (CN), University of Chinese Academy of Sciences (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 52%
Ferroelectric and Piezoelectric Materials
0.23
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