Wider SOA SGT MOSFET With Self-Adjusting Negative Feedback by Patterning the Varied Resistance of Source

VRS-SGT (Varied Resistance of Source Split Gate Trench MOSFETs) with self-adjusting negative feedback to balance the electrical and temperature characteristics, employing the varied resistance of patterned source is firstly developed in this letter to improve safe operating area (SOA) for automotive power devices used in linear mode. When operating in the linear mode, the max <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{d}$ </tex-math></inline-formula> of VRS-SGT raises to 20 A in condition of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{d} = $ </tex-math></inline-formula> <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{g} = 10$ </tex-math></inline-formula> V and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">PT</i> = 10 ms, increased by 48% compared with Conventional-SGT (C-SGT) due to lower ZTC and weaker positive current-temperature feedback. In addition, the low doping N-region for source resistance helps the VRS-SGT set up the self-ballast negative feedback mechanism to increase the source potential (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{s}$ </tex-math></inline-formula>), which can further suppress the trigger of parasitic NPN while slowing down the startup of MOSFETs. Varied <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{s}$ </tex-math></inline-formula> in N-region can adjust the current distribution within the chip so that the temperature tends to be more uniform when operating in linear mode. In addition, the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{\textit {ds}-\textit {on}} $ </tex-math></inline-formula> of VRS-SGT increases by only 3%, achieving a good trade-off between SOA and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{\textit {ds}-\textit {on}}$ </tex-math></inline-formula>.

Authors

Institutions

Publication Details

Journal
IEEE Electron Device Letters
Published
2024-08-09
DOI
https://doi.org/10.1109/led.2024.3441235
Citations
2
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
0.42
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Wider SOA SGT MOSFET With Self-Adjusting Negative Feedback by Patterning the Varied Resistance of Source

Hong-Ping Ma, Wei Huang, Weiye Mo, Qing-Chun Zhang et al.
2 citations
IEEE Electron Device Letters
Advancements in Semiconductor Devices and Circuit Design
0.42
article

Wider SOA SGT MOSFET With Self-Adjusting Negative Feedback by Patterning the Varied Resistance of Source

Hong-Ping Ma, Wei Huang, Weiye Mo, Qing-Chun Zhang, Liang Li, Haonan Liu, Yang Song, Debin Zhang, Xuan Xiao, D. W. Zhang, Jun Ye
article en
2 citations

Abstract

VRS-SGT (Varied Resistance of Source Split Gate Trench MOSFETs) with self-adjusting negative feedback to balance the electrical and temperature characteristics, employing the varied resistance of patterned source is firstly developed in this letter to improve safe operating area (SOA) for automotive power devices used in linear mode. When operating in the linear mode, the max <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{d}$ </tex-math></inline-formula> of VRS-SGT raises to 20 A in condition of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{d} = $ </tex-math></inline-formula> <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{g} = 10$ </tex-math></inline-formula> V and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">PT</i> = 10 ms, increased by 48% compared with Conventional-SGT (C-SGT) due to lower ZTC and weaker positive current-temperature feedback. In addition, the low doping N-region for source resistance helps the VRS-SGT set up the self-ballast negative feedback mechanism to increase the source potential (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{s}$ </tex-math></inline-formula>), which can further suppress the trigger of parasitic NPN while slowing down the startup of MOSFETs. Varied <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{s}$ </tex-math></inline-formula> in N-region can adjust the current distribution within the chip so that the temperature tends to be more uniform when operating in linear mode. In addition, the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{\textit {ds}-\textit {on}} $ </tex-math></inline-formula> of VRS-SGT increases by only 3%, achieving a good trade-off between SOA and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{\textit {ds}-\textit {on}}$ </tex-math></inline-formula>.

IEEE Electron Device LettersVol. 45(10)
Fudan University (CN), China Resources (China) (CN), Suzhou Vocational University (CN), Shanghai Fudan Microelectronics (China) (CN)
Openalex Percentile: Top 39%
Advancements in Semiconductor Devices and Circuit Design
0.42
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.