Wider SOA SGT MOSFET With Self-Adjusting Negative Feedback by Patterning the Varied Resistance of Source
VRS-SGT (Varied Resistance of Source Split Gate Trench MOSFETs) with self-adjusting negative feedback to balance the electrical and temperature characteristics, employing the varied resistance of patterned source is firstly developed in this letter to improve safe operating area (SOA) for automotive power devices used in linear mode. When operating in the linear mode, the max <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{d}$ </tex-math></inline-formula> of VRS-SGT raises to 20 A in condition of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{d} = $ </tex-math></inline-formula> <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{g} = 10$ </tex-math></inline-formula> V and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">PT</i> = 10 ms, increased by 48% compared with Conventional-SGT (C-SGT) due to lower ZTC and weaker positive current-temperature feedback. In addition, the low doping N-region for source resistance helps the VRS-SGT set up the self-ballast negative feedback mechanism to increase the source potential (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{s}$ </tex-math></inline-formula>), which can further suppress the trigger of parasitic NPN while slowing down the startup of MOSFETs. Varied <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{s}$ </tex-math></inline-formula> in N-region can adjust the current distribution within the chip so that the temperature tends to be more uniform when operating in linear mode. In addition, the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{\textit {ds}-\textit {on}} $ </tex-math></inline-formula> of VRS-SGT increases by only 3%, achieving a good trade-off between SOA and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{\textit {ds}-\textit {on}}$ </tex-math></inline-formula>.
Authors
- Hong-Ping Ma (ORCID: https://orcid.org/0000-0003-4175-5437)
- Wei Huang (ORCID: https://orcid.org/0000-0003-2314-7489)
- Weiye Mo (ORCID: https://orcid.org/0000-0002-1064-8295)
- Qing-Chun Zhang (ORCID: https://orcid.org/0000-0003-2482-2554)
- Liang Li (ORCID: https://orcid.org/0000-0002-6836-042X)
- Haonan Liu (ORCID: https://orcid.org/0009-0000-4725-9798)
- Yang Song (ORCID: https://orcid.org/0009-0001-9076-333X)
- Debin Zhang (ORCID: https://orcid.org/0000-0002-9099-8008)
- Xuan Xiao (ORCID: https://orcid.org/0009-0002-2086-7309)
- D. W. Zhang
- Jun Ye
Institutions
- Fudan University (CN)
- China Resources (China) (CN)
- Suzhou Vocational University (CN)
- Shanghai Fudan Microelectronics (China) (CN)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2024-08-09
- DOI
- https://doi.org/10.1109/led.2024.3441235
- Citations
- 2
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.42